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The memory demands of large-scale deep neural networks (DNNs) require synaptic weight values to be stored and updated in off-chip memory like dynamic random-access memory, which reduces energy efficiency and increases training time.…

Applied Physics · Physics 2025-10-08 Abhishek Kumar , Peter D. Hodgson , Manus Hayne , Avirup Dasgupta

A superconducting loop stores persistent current without any ohmic loss, making it an ideal platform for energy efficient memories. Conventional superconducting memories use an architecture based on Josephson junctions (JJs) and have…

We have studied the electronic structure and charge-carrier dynamics of individual single-wall carbon nanotubes (SWNTs) and nanotube ropes using optical and electron-spectroscopic techniques. The electronic structure of semiconducting SWNTs…

Materials Science · Physics 2009-11-10 A. Hagen , G. Moos , V. Talalaev , J. W. Tomm , T. Hertel

We have fabricated air-stable n-type, ambipolar carbon nanotube field effect transistors (CNFETs), and used them in nanoscale memory cells. N-type transistors are achieved by annealing of nanotubes in hydrogen gas and contacting them by…

Mesoscale and Nanoscale Physics · Physics 2015-06-24 M. Radosavljevic , M. Freitag , K. V. Thadani , A. T. Johnson

Memory devices operating due to the fast proton transfer (PT) process are proposed by means of the first-principles calculations. Writing an information is performed using the electrostatic potential of the scanning tunneling microscopy…

Mesoscale and Nanoscale Physics · Physics 2015-11-26 Malgorzata Wierzbowska

The demand for low-dissipation nanoscale memory devices is as strong as ever. As Moore's Law is staggering, and the demand for a low-power-consuming supercomputer is high, the goal of making information processing circuits out of…

Superconductivity · Physics 2017-07-18 Andrew Murphy , Dmitri Averin , Alexey Bezryadin

Molecular level components, like carbon multiwalled nanotubes (MWNT), show great potential for future nanoelectronics. At low frequencies, only the outermost carbon layer determines the transport properties of the MWNT. Due to the…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 Markus Ahlskog , Pertti Hakonen , Mikko Paalanen , Leif Roschier , Reeta Tarkiainen

Development of memory devices with ultimate performance has played a key role in innovation of modern electronics. As a mainstream technology nonvolatile memory devices have manifested high capacity and mechanical reliability, however…

The inability to synthesize single-wall carbon nanotubes (SWCNTs) possessing uniform electronic properties and chirality represents the major impediment to their widespread applications. Recently, there is growing interest to explore and…

Single walled carbon nanotubes (SWNT) have displayed a wealth of quantum transport phenomena thus far. Defect free, unperturbed SWNTs with wellbehaved or tunable metal contacts are important to probing the intrinsic electrical properties of…

Mesoscale and Nanoscale Physics · Physics 2015-06-25 Jien Cao , Qian Wang , Hongjie Dai

Performance improvements are expected from integration of photonic devices into information processing systems, and in particular, all-optical memories provide a key functionality. Scaling down the size of memory elements is desirable for…

Mesoscale and Nanoscale Physics · Physics 2018-08-24 T. Uda , A. Ishii , Y. K. Kato

Many key electronic technologies (e.g., large-scale computing, machine learning, and superconducting electronics) require new memories that are fast, reliable, energy-efficient, and of low-impedance at the same time, which has remained a…

Applied Physics · Physics 2020-01-15 Lijun Zhu , Lujun Zhu , Shengjie Shi , D. C. Ralph , R. A. Buhrman

The excellent properties of transistors, wires, and sensors made from single-walled carbon nanotubes (SWNTs) make them promising candidates for use in advanced nanoelectronic systems. Gas-phase growth procedures such as the high pressure…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 Danvers E. Johnston , Mohammad F. Islam , Arjun G. Yodh , Alan T. Johnson

Single-walled carbon nanotubes are promising nanoelectronic materials but face long-standing challenges including production of pure semiconducting SWNTs and integration into ordered structures. Here, highly pure semiconducting…

Single electron transistors (SETs) are fabricated by placing single walled carbon nanotubes (SWNTs) on a 100 nm wide local Al/Al2O3 bottom gate and then contacting with Pd electrodes. Coulomb oscillations up to 125 K were observed and…

Mesoscale and Nanoscale Physics · Physics 2009-11-13 Paul Stokes , Saiful I. Khondaker

This work represents the first electro-thermal study of metallic single-wall carbon nanotubes (SWNTs) for interconnect applications. Experimental data and careful modeling reveal that self-heating is of significance in short (1 < L < 10 um)…

Mesoscale and Nanoscale Physics · Physics 2016-11-15 Eric Pop , David Mann , John Reifenberg , Kenneth Goodson , Hongjie Dai

Applications based on Single Walled Carbon Nanotube (SWNT) are good example of the great need to continuously develop metrology methods in the field of nanotechnology. Contact and interface properties are key parameters that determine the…

Mesoscale and Nanoscale Physics · Physics 2012-01-23 Julien Buchoux , Ludovic Bellon , Sophie Marsaudon , Jean-Pierre Aimé

High-performance solution-processed short-channel carbon nanotube (CNT) thin film transistors (TFTs) are fabricated using densely aligned arrays of metallic CNTs (m-CNTs) as source and drain electrodes, and aligned arrays of semiconducting…

Mesoscale and Nanoscale Physics · Physics 2015-06-18 Biddut K. Sarker , Narae Kang , Saiful I. Khondaker

As computing power demands continue to grow, superconducting electronics present an opportunity to reduce power consumption by increasing the energy efficiency of digital logic and memory. A key milestone for scaling this technology is the…

A simple method combining photolithography and shadow (or angle) evaporation is developed to fabricate single-walled carbon nanotube (SWCNT) devices with tube lengths L~10-50 nm between metal contacts. Large numbers of such short devices…

Materials Science · Physics 2009-11-10 Ali Javey , Pengfei Qi , Qian Wang , Hongjie Dai
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