Related papers: Room temperature magnetization switching in topolo…
Three-dimensional (3D) topological insulators (TIs) are candidate materials for various electronic and spintronic devices due to their strong spin-orbit coupling and unique surface electronic structure. Rapid, low-cost preparation of…
Spin-orbit torques (SOTs), which rely on spin current generation from charge current in a nonmagnetic material, promise an energy-efficient scheme for manipulating magnetization in magnetic devices. A critical topic for spintronic devices…
Multiferroic materials have undergone extensive research in the past two decades in an effort to produce a sizable room-temperature magneto-electric (ME) effect in either exclusive or composite materials for use in a variety of electronic…
Magnetic tunnel junctions (MTJs) based on all-two dimensional (2D) van der Waals heterostructures with sharp and clean interfaces in atomic scale are essential for the application of next-generation spintronics. However, the lack of…
We report efficient spin to charge conversion (SCC) in the topological insulator (TI) based heterostructure ($BiSbTe_{1.5}Se_{1.5}/Cu/Ni_{80}Fe_{20}$) by using spin-pumping technique where $BiSbTe_{1.5}Se_{1.5}$ is the TI and…
Topological insulators embody a new state of matter characterized entirely by the topological invariants of the bulk electronic structure rather than any form of spontaneously broken symmetry. Unlike the 2D quantum Hall or quantum…
We investigate spin transport in two dimensional ferromagnetic (FTI) and antiferromagnetic (AFTI) topological insulators. In presence of an in plane magnetization AFTI supports zero energy modes, which enables topologically protected edge…
A simple surface band structure and a large bulk band gap have allowed Bi2Se3 to become a reference material for the newly discovered three-dimensional topological insulators, which exhibit topologically-protected conducting surface states…
Current-induced spin-orbit torques (SOTs) represent one of the most effective ways to manipulate the magnetization in spintronic devices. The orthogonal torque-magnetization geometry, the strong damping, and the large domain wall velocities…
Spin-orbit torque (SOT) can be used to efficiently manipulate the magnetic state of magnetic materials, which is an essential element for memory and logic applications. Due to symmetry constraints, only in-plane spins can be injected into…
Electrical manipulation of spin textures inside antiferromagnets represents a new opportunity for developing spintronics with superior speed and high device density. Injecting spin currents into antiferromagnets and realizing efficient…
Current-induced spin-orbit torque (SOT) has emerged as a promising method for achieving energy-efficient magnetization switching in advanced spintronic devices. However, technological advancement has been inadequate because an external…
We report the observation of metal-like to insulator transition (MTI) in the 3dpyrochlore oxide Tb2Ti2O7 at 603 K due to the interaction of empty 3d orbitals of Ti4+ with O2- ions, evidenced by the transition in resistivity. Magnetisation,…
Spin-orbit torque arising from the spin-orbit-coupled surface states of topological insulators enables current-induced control of magnetization with high efficiency. Here, alternating-current (AC) driven magnetization reversal is…
Topological insulators (TIs) present a neoteric class of materials, which support delocalised, conducting surface states despite an insulating bulk. Due to their intriguing electronic properties, their optical properties have received…
Spin-orbit torque (SOT)-induced magnetization switching shows promise for realizing ultrafast and reliable spintronics devices. Bipolar switching of perpendicular magnetization via SOT is achieved under an in-plane magnetic field collinear…
We report a novel pressure-induced spin-density-wave transition in the superconductor Mo3Sb7 figured our by measurements of the electrical resistivity and magnetization under hydrostatic pressure. The critical temperature of superconducting…
We report electrical resistivity, magnetic and magnetocaloric properties in Sm0.7-xLaxSr0.3MnO3 series for x= 0, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.65, and 0.7. All the compounds show second order paramagnetic to ferromagnetic transition at T…
Understanding the spin-texture behavior of boundary modes in ultrathin topological insulator films is critically essential for the design and fabrication of functional nano-devices. Here by using spin-resolved photoemission spectroscopy…
Magnetic exchange driven proximity effect at a magnetic insulator / topological insulator (MI/TI) interface provides a rich playground for novel phenomena as well as a way to realize low energy dissipation quantum devices. Here we report a…