Related papers: Room temperature magnetization switching in topolo…
We predict an unconventional spin-transfer torque (STT) acting on the magnetization of a free ferromagnetic (F) layer within N/TI/F vertical heterostructures which originates from strong spin-orbit coupling (SOC) on the surface of a…
We formulate and quantify the spin-orbit torque (SOT) in intrinsic antiferromagnetic topological insulator $\rm MnBi_2Te_4$ of a few septuple-layer thick, which exhibits conspicuous layer-resolved characteristics. Contrary to known…
Controlling magnetic order in magnetic topological insulators (MTIs) is a key to developing spintronic applications with MTIs, and is commonly achieved by changing the magnetic doping concentration, which inevitably affects…
Electrically controllable non-volatile magnetic memories show great potential for the replacement of semiconductor-based technologies. Recently there has been strong interest in spin-orbit torque (SOT) induced magnetization reversal due to…
Electric-field control of magnetization dynamics is fundamentally and technologically important for future spintronic devices. Here, based on electric-field control of both magnetic anisotropy and spin--orbit torque, two distinct methods…
The magnetic and electronic properties of the magnetically doped topological insulator Bi$_{\rm 2-x}$Mn$_{\rm x}$Te$_3$ were studied using electron spin resonance (ESR) and measurements of static magnetization and electrical transport. The…
Spin-momentum helical locking is one of the most important properties of the nontrivial topological surface states (TSS) in 3D topological insulators (TI). It underlies the iconic topological protection (suppressing elastic backscattering)…
Studies of negative magnetoresistance in novel materials have recently been in the forefront of spintronic research. Here, we report an experimental observation of the temperature dependent negative magnetoresistance in Bi2Te3 topological…
We report an experimental study of electron transport properties of MnSe/(Bi,Sb)2Te3 heterostructures, in which MnSe is an antiferromagnetic insulator, and (Bi,Sb)2Te3 is a three-dimensional topological insulator (TI). Strong magnetic…
We report the synthesis, structural characterization, and investigation of electrical transport, magnetic and specific heat properties of bulk semiconducting layered material Ta$_2$Ni$_3$Te$_5$. Ta$_2$Ni$_3$Te$_5$ crystallizes in the…
Electric field-induced giant resistive switching triggered by insulator-to-metal transition (IMT) is one of the promising approaches for developing a new class of electronics often referred to as Mottronics. Achieving this resistive…
The integration of two-dimensional (2D) van der Waals (vdW) magnets with topological insulators or heavy metals holds great potential for realizing next-generation spintronic memory devices. However, achieving high-efficiency SOT switching…
Topological insulators are novel quantum materials with metallic surface transport, but insulating bulk behavior. Often, topological insulators are dominated by bulk contributions due to defect induced bulk carriers, making it difficult to…
This study reports the magnetization switching induced by spin-orbit torque (SOT) from the spin current generated in Co2MnGa magnetic Weyl semimetal (WSM) thin films. We deposited epitaxial Co2MnGa thin films with highly B2-ordered…
Topological insulators with their topological protected surface states are highly promising quantum materials. In this article the micro-flakes of single-crystalline topological insulators Bi2Te3 and Sb2Te3 are explored through physical…
Spin-orbit torques (SOTs) from transition metal dichalcogenides systems (TMDs) in conjunction with ferromagnetic materials are recently attractive in spintronics for their versatile features. However, most of the previously studied…
Topological insulators (TIs) are materials with an insulating bulk characterized by a gapped band structure, along with gapless metallic surface states having a Dirac cone with a helical spin structure in momentum space. The helical…
We theoretically investigate the possibility of establishing ferromagnetism in the topological insulator Bi2Se3 via magnetic doping of 3d transition metal elements. The formation energies, charge states, band structures, and magnetic…
We report the observation of ferromagnetic resonance-driven spin pumping signals at room temperature in three-dimensional topological insulator thin films -- Bi2Se3 and (Bi,Sb)2Te3 -- deposited by molecular beam epitaxy on yttrium iron…
We report a metal-insulator like transition in single crystalline 3D topological insulator Bi2Te3 at a temperature of 230K in presence of an external magnetic field applied normal to the surface. This transition becomes more prominent at…