Related papers: Switching synchronization in 1-D memristive networ…
We discuss the physical properties of realistic memristive, memcapacitive and meminductive systems. In particular, by employing the well-known theory of response functions and microscopic derivations, we show that resistors, capacitors and…
The linear (proportional to local vacancy concentration) term in specific resistance of the material does not directly contribute to the change of memristor's total resistance when the vacancies are redistributed inside while keeping their…
We have compared the phase synchronization transition of the second order Kuramoto model on 2D lattices and on large, synthetic power grid networks, generated from real data. The latter are weighted, hierarchical modular networks. Due to…
We study the synchronization properties of a generic networked dynamical system, and show that, under a suitable approximation, the transition to synchronization can be predicted with the only help of eigenvalues and eigenvectors of the…
Many natural and human-made complex systems feature group interactions that adapt over time in response to their dynamic states. However, most of the existing adaptive network models fall short of capturing these group dynamics, as they…
We provide a rigorous solution to the problem of constructing a structural evolution for a network of coupled identical dynamical units that switches between specified topologies without constraints on their structure. The evolution of the…
This paper investigates the utilization of transmission switching to improve synchronization performance of low-inertia grids. The synchronization performance of power girds is first measured by the $\mathcal{H}_2$ norm of linearized power…
Memristors stand out as promising components in the landscape of memory and computing. Memristors are generally defined by a conductance equation containing a state variable that imparts a memory effect. The current-voltage cycling causes…
Stochastic reaction networks are mathematical models frequently used in, but not limited to, biochemistry. These models are continuous-time Markov chains whose transition rates depend on certain parameters called rate constants, which…
Memristors, when utilized as electronic components in circuits, can offer opportunities for the implementation of novel reconfigurable electronics. While they have been used in large arrays, studies in ensembles of devices are comparatively…
A new mathematical model of memristive neural networks described by the partly diffusive reaction-diffusion equations with weak synaptic coupling is proposed and investigated. Under rather general conditions it is proved that there exists…
Resistance switching devices are of special importance because of their application in resistive memories (RRAM) which are promising candidates for replacing current nonvolatile memories and realize storage class memories. These devices…
A new model of neural networks described by the memristive and diffusive Hindmarsh-Rose equations is proposed. Globally dissipative dynamics is shown with absorbing sets in the state spaces. Through sharp and uniform grouping estimates and…
Single-molecule magnets weakly coupled to two ferromagnetic leads act as memory devices in electronic circuits---their response depends on history, not just on the instantaneous applied voltage. We show that magnetic anisotropy introduces a…
Synchronization in networks of coupled oscillators is known to be largely determined by the spectral and symmetry properties of the interaction network. Here we leverage this relation to study a class of networks for which the threshold…
Memristive devices are promising elements for energy-efficient neuromorphic computing and future artificial intelligence systems. For diffusive memristors, the device state switching occurs because of the sequential formation and…
We propose an analytical technique to study large fluctuations and switching from internal noise in complex networks. Using order-disorder kinetics as a generic example, we construct and analyze the most probable, or optimal path of…
Resistive memories (RRAM) are promising candidates for replacing present nonvolatile memories and realizing storage class memories; hence resistance switching devices are of particular interest. These devices are typically memristive, with…
Recent advances in nanoscale science and technology provide possibilities to directly self-assemble and integrate functional circuit elements within the wiring scheme of devices with potentially unique architectures. Electroionic resistive…
Memristive neural networks (MNNs), which use memristors as neurons or synapses, have become a hot research topic recently. However, most memristors are not compatible with mainstream integrated circuit technology and their stabilities in…