Related papers: Low-threshold optically pumped lasing in highly st…
Solar-pumped lasers, predominantly based on neodymium gain media, offer a promising route to renewable laser-energy conversion and space-based photonics; however, their performance has been constrained by thermal loading and limited power…
Nanolasers operate with a minimal amount of active material and low losses. In this regime, single layers of transition-metal dichalcogenides (TMDs) are being investigated as next generation gain materials due to their high quantum…
We propose and analyze theoretically a double magnetic plasmon resonance nanolaser, in which Ytterbium-erbium co-doped material is used as the gain medium. Through design of the double magnetic resonance modes, pumping light (980nm) can be…
Lasers are ubiquitous for information storage, processing, communications, sensing, biological research, and medical applications [1]. To decrease their energy and materials usage, a key quest is to miniaturize lasers down to nanocavities…
The concept of a gamma-ray telescope based on a Laue lens offers the possibility to increase the sensitivity by more than an order of magnitude with respect to existing instruments. Laue lenses have been developed by our collaboration for…
Titanium doped sapphire (Ti:sapphire) is a laser gain material with broad gain bandwidth benefiting from the material stability of sapphire. These favorable characteristics of Ti:sapphire have given rise to femtosecond lasers and optical…
Low threshold lasers realized within compact, high quality optical cavities enable a variety of nanophotonics applications. Gallium nitride (GaN) materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an…
Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For instance, GeSn layers with 12.5% of Sn were reported to lase…
We report on lasing at visible wavelengths in arrays of ferromagnetic Ni nanodisks overlaid with an organic gain medium. We demonstrate that by placing an organic gain material within the mode volume of the plasmonic nanoparticles both the…
Strain engineering has proven to be vital for germanium-based photonics, in particular light emission. However, applying a large permanent biaxial strain to germanium has been a challenge. We present a simple, CMOS-compatible technique to…
We realize a laser with a cloud of cold rubidium atoms as gain medium, placed in a low-finesse cavity. Three different regimes of laser emission are observed corresponding respectively to Mollow, Raman and Four Wave Mixing mechanisms. We…
Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these requirements and has been proposed as a high-mobility channel…
We report lasing from a lithographically defined buried heterostructure with an estimated lateral footprint of (107 nm)^2, embedded in an InP photonic-crystal nanobeam cavity. This represents the smallest laterally confined buried…
There are many researches reported in using Germanium in Silicon based lasers but acquiring this potential for a nanolaser may also be important for development of a CMOS compatible plasmon source. In this paper, a Ge/SiGe multiple quantum…
We predict collective 'free-space' lasing in a dense nanoscopic emitter arrangement where dipole-dipole coupled atomic emitters synchronize their emission and exhibit lasing behavior without the need for an optical resonator. At the example…
Group IV GeSn double-heterostructure (DHS) lasers offer unique advantages of a direct bandgap and CMOS compatibility. However, further improvements in laser performance have been bottlenecked by limited junction properties of GeSn through…
Nanowire lasers are sought for near-field and on-chip photonic applications as they provide integrable, coherent and monochromatic radiation. A wavelength-scale nanowire acts as both the gain medium and the cavity for the lasing action: the…
GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the…
Silicon photonics in the near-Infra-Red, up to 1.6 um, is already one of key technologies in optical data communications, particularly short-range. It is also being prospected for applications in quantum computing, artificial intelligence,…
Near-infrared (NIR) sensors find numerous applications within various industry fields, including optical communications and medical diagnostics. However, the state-of-the-art NIR sensors made of germanium (Ge) suffer from rather poor…