Related papers: Electron g-factor of valley states in realistic si…
Spin qubits composed of either one or three electrons are realized in a quantum dot formed at a Si/SiO_2-interface in isotopically enriched silicon. Using pulsed electron spin resonance, we perform coherent control of both types of qubits,…
Silicon quantum dots are considered an excellent platform for spin qubits, partly due to their weak spin-orbit interaction. However, the sharp interfaces in the heterostructures induce a small but significant spin-orbit interaction which…
The dependence of the g-factors of semiconductor donors on applied electric and magnetic fields is of immense importance in spin based quantum computation and in semiconductor spintronics. The donor g-factor Stark shift is sensitive to the…
Understanding the $g$-factor physics of Si/SiGe quantum dots is crucial for realizing high-quality spin qubits. While previous work has explained some aspects of $g$-factor physics in idealized geometries, the results do not extend to…
As silicon spin qubit chips are increasing in qubit number and area, methods for the screening of qubit related material parameters become vital. Here we demonstrate the two-dimensional mapping of small variations of the electron g-factor…
We show that the g-factor and the spin-flip time T_{1} of a heterojunction quantum dot is very sensitive to the band-bending interface electric field even in the absence of wave function penetration into the barrier. When this electric…
We identify the presence of monoatomic steps at the Si/SiGe or Si/SiO$_2$ interface as a dominant source of variations in the dephasing time of Si quantum dot (QD) spin qubits. First, using atomistc tight-binding calculations we show that…
The magnetization of semiconductor quantum dots in the presence of spin-orbit coupling and interactions is investigated numerically. When the dot is occupied by two electrons we find that a level crossing between the two lowest many-body…
We define single electron spin qubits in a silicon MOS double quantum dot system. By mapping the qubit resonance frequency as a function of gate-induced electric field, the spectrum reveals an anticrossing that is consistent with an…
Emerging theoretical concepts for quantum technologies have driven a continuous search for structures where a quantum state, such as spin, can be manipulated efficiently. Central to many concepts is the ability to control a system by…
We study quantum interference effects of a qubit whose energy levels are continuously modulated. The qubit is formed by an impurity electron spin in a silicon tunneling field-effect transistor, and it is read out by spin blockade in a…
We study theoretically the renormalization of the spin-orbit coupling constant of two-dimensional electrons by electron-electron interactions. We demonstrate that, similarly to the $g$ factor, the renormalization corresponds to the…
In this theoretical study we qualitatively and quantitatively investigate the electric dipole spin resonance (EDSR) in a single Si/SiGe quantum dot in the presence of a magnetic field gradient, e.g., produced by a ferromagnet. We model a…
The electrical control of single spin qubits based on semiconductor quantum dots is of great interest for scalable quantum computing since electric fields provide an alternative mechanism for qubit control compared with magnetic fields and…
We show that the mixing between spin and valley degrees of freedom in a silicon quantum bit (qubit) can be controlled by a static electric field acting on the valley splitting $\Delta$. Thanks to spin-orbit coupling, the qubit can be…
Research on Si quantum dot spin qubits is motivated by the long spin coherence times measured in Si, yet the orbital spectrum of Si dots is increased as a result of the valley degree of freedom. The valley degeneracy may be lifted by the…
Hole spins in silicon represent a promising yet barely explored direction for solid-state quantum computation, possibly combining long spin coherence, resulting from a reduced hyperfine interaction, and fast electrically driven qubit…
An electron spin qubit in silicon quantum dots holds promise for quantum information processing due to the scalability and long coherence. An essential ingredient to recent progress is the employment of micromagnets. They generate a…
The choice of substrate orientation for semiconductor quantum dot circuits offers opportunities for tailoring spintronic properties such as g-factors for specific functionality. In this letter, we demonstrate the operation of a few-electron…
The knowledge of electron and hole g-factors, their control and engineering are key for the usage of the spin degree of freedom for information processing in solid state systems. The electronic g-factor will be materials dependent, the…