Related papers: Enhanced electron dephasing in three-dimensional t…
The surface bound electronic states of three-dimensional topological insulators, as well as the edge states in two-dimensional topological insulators, are investigated in the presence of a circularly polarized light. The strong coupling…
Low-field magnetotransport measurements of topological insulators such as Bi$_2$Se$_3$ are important for revealing the nature of topological surface states by quantum corrections to the conductivity, such as weak-antilocalization. Recently,…
Confined electrons in low dimensions host desirable material functions for downscaled electronics as well as advanced energy technologies. Thermoelectricity is a most fascinating example, since the dimensionality modifies the electron…
Topological Insulators (TIs) present an interesting materials platform for nanoscale, high frequency devices because they support high mobility, low scattering electronic transport within confined surface states. However, a robust…
Surface states of topological insulators (TIs) have been playing the central role in the majority of outstanding investigations in low-dimensional electron systems for more than 10 years. TIs based on high-quality strained HgTe films…
We demonstrate that the terahertz/infrared radiation induced photogalvanic effect, which is sensitive to the surface symmetry and scattering details, can be applied to study the high frequency conductivity of the surface states in…
Ever since the first discoveries of the quantum-interference transport in mesoscopic systems, the electron dephasing times, $\tau_\phi$, in the concentrated AuPd alloys have been extensively measured. The samples were made from different…
To understand the seemingly absent temperature dependence in the conductance of two-dimensional topological insulator edge states, we perform a numerical study which identifies the quantitative influence of the combined effect of dephasing…
We study the transport properties of interacting electrons in a disordered quantum wire within the framework of the Luttinger liquid model. The conductivity at finite temperature is nonzero only because of inelastic electron-electron…
The first-principle theory of electron dephasing by disorder-induced two state fluctuators is developed. There exist two mechanisms of dephasing. First, dephasing occurs due to direct transitions between the defect levels caused by…
Conduction electrons in disordered metals and heavily doped semiconductors at low temperatures preserve their phase coherence for a long time: phase relaxation time $\tau_\phi$ can be orders of magnitude longer than the momentum relaxation…
Using the non-equilibrium Keldysh Green's function formalism, we investigate the effect of defects on the electronic structure and transport properties of two-dimensional topological insulators (TI). We demonstrate how the spatial flow of…
We present low-temperature transport measurements of a gate-tunable thin film topological insulator system that features high mobility and low carrier density. Upon gate tuning to a regime around the charge neutrality point, we infer an…
Scanning tunneling microscopy and spectroscopy have been used to investigate the femtosecond dynamics of Dirac fermions in the topological insulator Bi$_2$Se$_3$ ultrathin films. At two-dimensional limit, bulk electrons becomes quantized…
Strong spin-orbit coupling in topological insulators results in the ubiquitously observed weak antilocalization feature in their magnetoresistance. Here we present magnetoresistance measurements in ultra thin films of the topological…
Three dimensional topological insulators are bulk insulators with $\mathbf{Z}_2$ topological electronic order that gives rise to conducting light-like surface states. These surface electrons are exceptionally resistant to localization by…
We study dephasing in electron transport through a large quantum dot (a Fabry-Perot interferometer) in the fractional quantum Hall regime with filling factor $2/3$. In the regime of sequential tunneling, dephasing occurs due to electron…
Topological insulators (TIs) constitute a new class of materials with unique properties resulting from the relativistic-like character and topological protection of their surface states. Theory predicts these to exhibit a rich variety of…
We consider in our work high quality single crystal thin films of Bi2Se3, grown by molecular beam epitaxy, both with and without Pb doping. Our ARPES data demonstrate topological surface states with a Fermi level lying inside the bulk band…
Battery electrode surfaces are generally coated with electronically insulating solid films of thickness 1-50 nm. Both electrons and Li+ can move at the electrode-surface film interface in response to the voltage, which adds complexity to…