Related papers: Valley Magnetoelectricity in Single-Layer MoS2
We show theoretically that two-dimensional direct-gap semiconductors with a valley degree of freedom, including monolayer transition-metal dichalcogenides and gapped bilayer graphene, have a longitudinal magnetoconductivity contribution…
We have discovered strong magnetoelectric (ME) effects in the single chiral-helical magnetic state of single-crystalline langasite Ba3NbFe3Si2O14 that is crystallographically chiral. The ferroelectric polarization, predominantly aligned…
In this work, we investigate the differential voltage generation arising from the direct magnetoelectric (ME) effect in nanoscale composite devices upon magnetization rotation from the magnetic ground state to an out-of-plane (OOP)…
The direct magnetoelectric (ME) effect resulting from the polarization changes induced in a ferroelectric film by the application of a magnetic field to a ferromagnetic substrate is described using the nonlinear thermodynamic theory. It is…
The two-dimensional (2D) multiferroic materials have widespread of application prospects in facilitating the integration and miniaturization of nanodevices. However, it is rarely coupling between the magnetic, ferroelectric, and ferrovalley…
In materials with an intrinsic magnetoelectric (ME) effect, the energy density comprises the polarization, magnetization and ME energy densities. These three components of energy define local (subwavelength) characteristics of…
The quantitative understanding of converse magnetoelectric effects, i.e., the variation of the magnetization as a function of an applied electric field, in extrinsic multiferroic hybrids is a key prerequisite for the development of future…
Magnetoelectric materials are attractive for several applications, including actuators, switches, and magnetic field sensors. Typical mechanisms for achieving a strong magnetoelectric coupling are rooted in transition metal magnetism. In…
Electric control of magnetism at room temperature is crucial for developing next-generation, low-power spintronic devices. However, the intrinsic incompatibility between ferroelectricity and magnetism in crystal symmetry, along with the…
We investigate the behavior of low-energy electrons in two-dimensional molybdenum disulfide when submitted to an external magnetic field. Highly degenerate Landau levels form in the material, between which light-induced excitations are…
Electrical control of the orbital degrees of freedom is an important area of research in the emerging field of "orbitronics." Orbital {\it gyrotropic} magneto-electric effect (OGME) is the generation of an orbital magnetization in a…
Searching for new functionality in next generation electronic devices is a principal driver of material physics research. Multiferroics simultaneously exhibit electric and magnetic order parameters that may be coupled through…
We derive a sum rule to demonstrate that the static magnetoelectric (ME) effect is governed by optical transitions that are simultaneously excited via the electric and magnetic components of light. By a systematic analysis of magnetic point…
Exploiting the valley degree of freedom to store and manipulate information provides a novel paradigm for future electronics. A monolayer transition metal dichalcogenide (TMDC) with broken inversion symmetry possesses two degenerate yet…
Ferro-valleytricity, a fundamental phenomenon that manifests spontaneous valley polarization, is generally considered to occur in two-dimensional (2D) materials with out-of-plane magnetization. Here, we propose a mechanism to realize…
In this article the mechanism of the linear magnetoelectric (ME) effect in the rhombohedral multiferroic BiFeO$_3$ is considered. The study is based on the symmetry approach of the GinzburgLandau type, in which polarization,…
The valley degree of freedom of electrons in solids has been proposed as a new type of information carriers beyond the electronic charge and spin. Recent experimental demonstrations of the optical orientation of the valley polarization and…
Controlling magnetism by purely electrical means is a key challenge to better information technology1. A variety of material systems, including ferromagnetic (FM) metals2,3,4, FM semiconductors5, multiferroics6,7,8 and magnetoelectric (ME)…
Magneto-optical effects (MOE), interfacing the fundamental interplay between magnetism and light, have served as a powerful probe for magnetic order, band topology, and valley index. Here, based on multiferroic and topological bilayer…
While tremendous success has been achieved to date in creating both single phase and composite magnetoelectric materials, the quintessential electric-field control of magnetism remains elusive. In this work, we demonstrate a linear…