Related papers: Inverse spin Hall effect in Nd doped SrTiO3
We report on an all-electrical measurement of the spin Hall effect in epitaxial Fe/In_{x}Ga_{1-x}As heterostructures with n-type channel doping (Si) and highly doped Schottky tunnel barriers. A transverse spin current generated by an…
Direct and inverse spin Hall effects lie at the heart of novel applications that utilize spins of electrons as information carriers, allowing generation of spin currents and detecting them via the electric voltage. In the standard…
Electric gating can strongly modulate a wide variety of physical properties in semiconductors and insulators, such as significant changes of conductivity in silicon, appearance of superconductivity in SrTiO3, the paramagnet-ferromagnet…
The spin Hall effect (SHE) and the magnetic spin Hall effect (MSHE) are responsible for electrical spin current generation, which is a key concept of modern spintronics. We theoretically investigated the spin conductivity induced by…
Oxide interfaces exhibit a broad range of physical effects stemming from broken inversion symmetry. In particular, they can display non-reciprocal phenomena when time reversal symmetry is also broken, e.g., by the application of a magnetic…
We quantify the spin Hall angle {\theta}SH and spin diffusion length lsd of Nb from inverse spin-Hall effect (iSHE) measurements in Nb/Ni80Fe20 bilayers under ferromagnetic resonance. By varying the Nb thickness tNb and comparing to a…
Electron irradiation is investigated as a way to dope the topological insulator Bi2Te3. For this, p-type Bi2Te3 single crystals have been irradiated with 2.5 MeV electrons at room temperature and electrical measurements have been performed…
The magnetization manipulation by spin-orbit torques (SOTs) in nonmagnetic-metal (NM)/ferromagnet (FM) heterostructures has provided great opportunities for spin devices. Besides the conventional spin Hall effect (SHE) in heavy metals with…
We have measured the inverse spin Hall effect (ISHE) in \textit{n}-Ge at room temperature. The spin current in germanium was generated by spin pumping from a CoFeB/MgO magnetic tunnel junction in order to prevent the impedance mismatch…
Using first-principles density functional theory calculations, we investigated the effect of charge doping in a LaNiO$_3$/SrTiO$_3$ superlattice. The detailed analysis based on two different simulation methods for doping clearly shows that…
We measure the low-frequency thermal fluctuations of pure spin current in a Platinum film deposited on yttrium iron garnet via the inverse spin Hall effect (ISHE)-mediated voltage noise as a function of the angle $\alpha$ between the…
We performed photoinduced inverse spin Hall effect (ISHE) measurements on a Pt/Ge(001) junction at room temperature. The spin-oriented electrons, photogenerated at the direct gap of Ge using circularly polarized light, provide a net spin…
Our investigation reveals a groundbreaking discovery of a negative inverse orbital Hall effect (IOHE) in Ge thin films. We employed the innovative orbital pumping technique where spin-orbital coupled current is injected into Ge films using…
Direct visualizations of spin accumulation due to the enhanced spin Hall effect (SHE) in bismuth (Bi) - doped silicon (Si) at room temperature are realized by using helicity-dependent photovoltage (HDP) measurements. Under application of a…
The spin polarization induced by the spin Hall effect (SHE) in thin films typically points out of the plane. This is rooted on the specific symmetries of traditionally studied systems, not in a fundamental constraint. Recently, experiments…
The spin Hall effect depends crucially on the intrinsic spin-orbit coupling of the energy band. Because of the smaller spin-orbit coupling in silicon, the spin Hall effect is expected to be much reduced. We show that the electric field in…
Dynamical antiferromagnets pump spins efficiently into adjacent conductors as ferromagnets. The high antiferromagnetic resonance frequencies represent a challenge for experimental detection, but magnetic fields can reduce these resonance…
We report a comprehensive experimental investigation of orbital-to-charge conversion in metallic and semiconductor materials, emphasizing the fundamental roles of the inverse orbital Hall effect (IOHE) and the inverse orbital Rashba effect.…
The understanding of spin dynamics in laterally confined structures on sub-micron length scales has become a significant aspect of the development of novel magnetic storage technologies. Numerous ferromagnetic resonance measurements,…
Recent discovery of orbital currents in several material platforms including light element metals has opened new possibilities for exploring novel transport phenomena and applications to spin-orbitronic devices. These orbital currents,…