Related papers: Island dynamics and anisotropy during vapor phase …
The surface orientation can have profound effects on the atomic-scale processes of crystal growth, and is essential to such technologies as GaN-based light-emitting diodes and high-power electronics. We investigate the dependence of…
We have performed Kinetic Monte Carlo simulation work to study the effect of diffusion anisotropy, bonding anisotropy and edge diffusion on island formation at different temperatures during the sub-monolayer film growth in Molecular Beam…
We have performed Kinetic Monte Carlo simulation to study the effect of diffusion anisotropy and bonding anisotropy on island formation at different temperatures during the sub-monolayer film growth in Molecular Beam Epitaxy. We use simple…
In low-temperature pulsed growth two-dimensional islands form and coarsen into ~10 nm features. The islands produce well-defined displaced x-ray diffraction peaks due to relaxation of anisotropic surface stress of the (2x1) reconstruction…
We study one-dimensional models of particle diffusion and attachment/detachment from islands where the detachment rates gamma(m) of particles at the cluster edges increase with cluster mass m. They are expected to mimic the effects of…
Understanding the growth of organic semi-conducting molecules with shape anisotropy is of high relevance to the processing of optoelectronic devices. This work provides insight into the growth of thin films of the prototypical rodlike…
Effect of an anisotropic detachment on a heteroepitaxial island shape is studied by means of a kinetic Monte Carlo simulation of a square lattice gas model. Only with molecular deposition followed by surface diffusion, islands grow in a…
A dense phase of GaAs wires forms in the early stages of strained growth on GaP,assembling from elongated Stranski-Krastanow islands. The electron diffraction during growth is consistent with long, faceted GaAs islands that are…
We study the nucleation of GaN islands grown by plasma-assisted molecular-beam epitaxy on AlN(0001) in a Stranski-Krastanov mode. In particular, we assess the variation of their height and density as a function of GaN coverage. We show that…
Square lattice gas models for heteroepitaxial growth are studied by means of kinetic Monte Carlo simulations, in order to find a possible origin of anisotropic island shape observed in growth experiments of long organic molecules. When…
We examine the structure and the evolution of Ge islands epitaxially grown on vicinal Si(111) surfaces by scanning tunneling microscopy. Contrary to what is observed on the singular surface, three-dimensional Ge nanoislands form directly…
We consider the shape evolution of two-dimensional islands on a crystal surface in the regime where mass transport is exclusively along the island edge. A directed mass current due to surface electromigration causes the island to migrate in…
We investigate the kinetics of submonolayer epitaxial growth which is driven by a fixed flux of monomers onto a substrate. Adatoms diffuse on the surface, leading to irreversible aggregation of islands. We also account for the effective…
The work shows that a single elongated island immersed in the quasi-neutral current sheet makes it MHD unstable. Typical values of growth rate are found to be several per cent of inverse Alfven time for broad sheets. Hall dynamics greatly…
The evolution of surface morphology during the growth of N-polar (000-1) GaN under N-rich condition is studied by kinetic Monte Carlo (kMC) simulations for two substrates miscuts 2deg and 4deg. The results are compared with experimentally…
The shape evolution of two-dimensional islands through periphery diffusion biased by an electromigration force is studied numerically using a continuum approach. We show that the introduction of crystal anisotropy in the mobility of edge…
The dynamics of Ag(111) surface state electrons confined to nanoscale hexagonal and triangular vacancy islands are investigated using scanning tunneling spectroscopy. The lifetimes of quantised states with significant amplitude near the…
Graphene films grown by vapor deposition tend to be polycrystalline due to the nucleation and growth of islands with different in-plane orientations. Here, using low-energy electron microscopy, we find that micron-sized graphene islands on…
Growth of gallium nitride on GaN(0001) surface is modeled by Monte Carlo method. Simulated growth is conducted in N-rich conditions, hence it is controlled by Ga atoms surface diffusion. It is shown that dominating four-body interactions of…
Images of the morphology of GaN (0001) surfaces often show half-unit-cell-height steps separating a sequence of terraces having alternating large and small widths. This can be explained by the $\alpha \beta \alpha \beta$ stacking sequence…