Related papers: Optimal charge-to-spin conversion in graphene on t…
The use of graphene in spintronic devices is contingent on its ability to convert a spin current into a charge current. We have systematically investigated the spin pumping induced spin-to-charge current conversion at the Graphene/FM…
We studied the square-octagonal lattice of the transition metal dichalcogenide MX$_2$ (with $M$=Mo, W; $X$=S, Se and Te), as an isomer of the normal hexagonal compound of MX$_2$. By band structure calculations, we observe the graphene-like…
Graphene is an ideal material for spin transport as very long spin relaxation times and lengths can be achieved even at room temperature. However, electrical spin injection is challenging due to the conductivity mismatch problem. Spin…
We examine the coexisting spin and charge density waves as a possible ground state of the magic-angle twisted bilayer graphene. When interactions are not included, the spectrum of the material has 4 (8 if spin is taken into account) almost…
Multilayered graphitic materials are not suitable as load-bearers due to their inherent weak interlayer bonding (for example, graphite is a solid lubricant in certain applications). This situation is largely improved when two-dimensional…
Twisted transition metal dichalcogenides (tTMDs) provide a highly tunable platform to explore the interplay between strong correlation and topology. Among them, the properties involving the charge degree of freedom have been extensively…
Magic-angle twisted trilayer graphene (MATTG) recently exhibited robust superconductivity at a higher transition temperature (TC) than the bilayer version. With electric gating from both the top and bottom sides, the superconductivity was…
Monolayer transition metal dichalcogenides are promising materials for spintronics due to their robust spin-valley locked valence states, enabling efficient charge-to-spin conversion via valley Hall effect with non-equilibrium spins…
We study the electronic band structure of monolayer graphene when Rashba spin-orbit coupling is present. We show that if the Rashba spin-orbit coupling is stronger than the intrinsic spin-orbit coupling, the low energy bands undergo…
In this paper we present spin-to-charge current conversion properties in the Weyl semimetal TaP by means of the inverse Rashba-Edelstein effect (IREE) with the integration of this quantum material with the ferromagnetic metal Permalloy…
In moir\'e graphene systems, electronic interactions lift spin and valley degeneracies, leading to symmetry-broken ground states. In helical trilayer graphene (HTG), we uncover a distinct interaction-driven mechanism in which the roles of…
The dependence of the spin-pumping effect on the yttrium iron garnet (Y3Fe5O12, YIG) thickness detected by the inverse spin Hall effect (ISHE) has been investigated quantitatively. Due to the spin-pumping effect driven by the magnetization…
Monolayer transition metal dichalcogenides (TMDs) offer a novel two-dimensional platform for semiconductor devices. One such application, whereby the added low dimensional crystal physics (i.e. optical spin selection rules) may prove TMDs a…
It is demonstrated that the electric dipole layer due to the overlapping of electron wavefunctions at metal/graphene contact results in negative Fermi-level pinning effect on the region of GaAs surface with low interface-trap density in…
Using density-functional theory, we calculate the electronic bandstructure of single-layer graphene on top of hexagonal In_2Te_2 monolayers. The geometric configuration with In and Te atoms at centers of carbon hexagons leads to a Kekule'…
We report experimental investigations of spin-to-charge current conversion and charge transfer dynamics (CT) at the interface of graphene/WS$_2$ van der Waals heterostructure. Pure spin current was produced by the spin precession in the…
The efficient generation and control of spin polarization via charge-spin conversion in topological semimetals are desirable for future spintronic and quantum technologies. Here, we report the charge-spin conversion (CSC) signals measured…
Graphene is of interest in the development of next-generation electronics due to its high electron mobility, flexibility and stability. However, graphene transistors have poor on/off current ratios because of the absence of a bandgap. One…
A recent experiment showed that proximity induced Ising spin-orbit coupling enhances the spin-triplet superconductivity in Bernal bilayer graphene. Here, we show that, due to the nearly perfect spin rotation symmetry of graphene, the…
Spin photogalvanic effect (SPGE) is an efficient method to generate a spin current by photoexcitation in a contactless and ultra-fast way. In two-dimensional (2D) collinear antiferromagnetic (AFM) materials that preserve the combined…