Related papers: Optimal charge-to-spin conversion in graphene on t…
We report the first measurements of spin injection in to graphene through a 20 nm thick tungsten disulphide (WS$_2$) layer, along with a modified spin relaxation time ({\tau}s) in graphene in the WS$_2$ environment, via spin-valve and Hanle…
We investigate the superconducting properties of inversion-symmetric twisted trilayer graphene by considering different parent states, including spin-singlet, triplet, and SO(4) degenerate states, with or without nodal points. By placing…
In order to enhance spin injection efficiency from ferromagnetic (FM) metal into a two-dimensional electron gas (2DEG), we introduce another FM metal and two tunnel barriers (I) between them to investigate the current polarization in such…
At high magnetic fields, monolayer graphene hosts competing phases distinguished by their breaking of the approximate SU(4) isospin symmetry. Recent experiments have observed an even denominator fractional quantum Hall state thought to be…
Two-dimensional systems with flat bands support correlated phases such as superconductivity and charge fractionalization. While twisted moire systems like twisted bilayer graphene have revealed such states, they remain complex to control.…
We report a study of the spin-to-charge current conversion in compressively strained Ge1-xSnx alloy epilayers as a function of the Sn concentration by means of the inverse spin Hall effect (ISHE). The spin current is generated by…
We investigate the proximity-induced spin-orbit coupling in heterostructures of twisted graphene and monolayers of transition-metal dichalcogenides (TMDCs) MoS$_2$, WS$_2$, MoSe$_2$, and WSe$_2$ from first principles. We identify strain,…
The interplay between localized magnetic moments and itinerant electrons gives rise to exotic quantum states in condensed matter systems. Two-dimensional moire superlattices offer a powerful platform for engineering heavy fermion states…
The spin-orbit interaction couples the electrons' motion to their spin. Accordingly, passing a current in a material with strong spin-orbit coupling generates a transverse spin current (spin Hall effect, SHE) and vice-versa (inverse spin…
We investigate the unusual features of the quantum transport in gapped monolayer graphene, which is in a pseudospin symmetry-broken state with a net perpendicular pseudomagnetization. Using these pseudoferromagnets (PFs), we propose a…
With the decrease of the dimensions of electronic devices, the role played by electrical contacts is ever increasing, eventually coming to dominate the overall device volume and total resistance. This is especially problematic for…
Electronic band structures in hydrogenated graphene are theoretically investigated by means of first-principle calculations and an effective tight-binding model. It is shown that regularly designed hydrogenation to graphene gives rise to a…
We investigate spin-charge conversion phenomena in hybrid structures of topological insulator (TI) thin films and magnetic insulators. We find an anisotropic inverse spin-galvanic effect (ISGE) that yields a highly tunable spin-orbit torque…
We report the observation of spin-polarized superconductivity in Bernal bilayer graphene when doped to a saddle-point van Hove singularity generated by large applied perpendicular electric field. We observe a cascade of electrostatic…
Semiconductor transition metal dichalcogenides (TMDs) have equivalent dynamics for their two spin/valley species. This arises from their energy-degenerated spin states, connected via time-reversal symmetry. When an out-of-plane magnetic…
We derive diffusion equations, which describe spin-charge coupled transport on the helical metal surface of a three-dimensional topological insulator. The main feature of these equations is a large magnitude of the spin-charge coupling,…
We report that an external electric field applied normal to bilayers of transition-metal dichalcogenides TX2, M = Mo, W, X = S, Se, creates significant spin-orbit splittings and reduces the electronic band gap linearly with the field…
Motivated by the triumph and limitation of graphene for electronic applications, atomically thin layers of group VI transition metal dichalcogenides are attracting extensive interest as a class of graphene-like semiconductors with a desired…
Transition metal dichalcogenides (TMDs) hold relevance for spin-triplet superconducting phases due to their inherent Ising spin-orbit coupling, but the majority of studies have so far focused on oversimplified models. In this work, we…
In transition metal dichalcogenide semiconductor monolayers the spin dynamics of electrons is controlled by the original spin-valley locking effect resulting from the interplay between spin-orbit interaction and inversion asymmetry. As a…