Related papers: Highly oriented EuO nanocrystalline films via redu…

NiO is a promising p-type material for photovoltaics and power electronics, but its temperature limits remain unclear. Using in situ high-temperature X-ray diffraction (HT-XRD) from 30 to 1100 C, we track the structural evolution of NiO…

Nanostrucured Europium oxide and hydroxide films were obtained by pulsed Nd:Yag (532 nm) laser ablation of an Europium metallic target, in the presence of a 1 mbar Helium buffer atmosphere. Both the produced film and the ambient plasma were…

Orientation, structure and morphology in the early growth stages of CuO films on strontium titanate were studied by synchrotron radiation X-ray diffraction. Nanostructured CuO films were obtained by ex situ heat treatment at 970 K in oxygen…

We synthesized crystalline films of neodymium nickel oxide (NdNiO3), a perovskite quantum material, switched the films from a metal phase (intrinsic) into an insulator phase (electron-doped) by field-driven lithium-ion intercalation, and…

Crystalline Fe3O4/NiO bilayers were grown on MgO(001) substrates using reactive molecular beam epitaxy to investigate their structural properties and their morphology. The film thickness either of the Fe3O4 film or of the NiO film has been…

Ruthenium dioxide (RuO$_2$) thin films were synthesized by Chemical Solution Deposition (CSD) on silicon substrates using only water and acetic acid as solvents. The microstructure, phase-purity, electrical and optical properties as well as…

We report on near normal infrared reflectivity spectra of ~550 nm thick films made of cosputtered transition metal nanograins and SiO2 in a wide range of metal fractions. Co0.85(SiO2)0.15,with conductivity well above the percolation…

Nanocrystals of indium oxide (In$_2$O$_3$) with sizes below 10 nm were prepared in alumina matrixes by using a co-pulverization method. The used substrates such as borosilicate glasses or (100) silicon as well as the substrate temperatures…

Ferroelectric materials with up-conversion luminescence (UCL) properties have potential opto-electric applications for display and sensing etc. Here, we demonstrate strong green UCL and enhanced electrical properties in Er3+-doped…

High entropy oxides (HEOs) are a class of materials, containing equimolar portions of five or more transition metal and/or rare-earth elements. We report here about the layer-by-layer growth of HEO…

Bismuth and Nickel transparent oxides thin films were grown on glass and flexible polythelene terephalate (PET) substrates by DC sputtering technique at room temperature 300 K. The structures of Bi2O3 and NiO films were analyzed by X-ray…

We have fabricated Na_xCoO_2 thin films via lateral diffusion of sodium into Co_3O_4 (111) epitaxial films (reactive solid-phase epitaxy: Ref. 4). The environment of thermal diffusion is key to the control of the sodium content in thin…

We have investigated a method for substituting oxygen with nitrogen in EuO thin films, which is based on molecular beam epitaxy distillation with NO gas as the oxidizer. By varying the NO gas pressure, we produce crystalline, epitaxial…

We report the growth, structural and magnetic properties of the less studied Eu-oxide phase, Eu$_3$O$_4$, thin films grown on a Si/SiO$_2$ substrate and Si/SiO$_2$/graphene using molecular beam epitaxy. The X-ray diffraction scans show that…

Nickel oxide (NiO) is a binary compound with a lot of applications in the present technology. NiO thin films were deposited by reactive sputtering magnetron under several voltage biases applied in the glass substrates (0, 50, 100, 200, 300,…

Bulk rhenium trioxide (ReO3) has an unusually high electrical conductivity and, being nanosized, has promising catalytic properties. However, the production of pure ReO3 thin films is challenging due to the difficulty to stabilize rhenium…

We report the crystallographic texture of ZnO thin films comprising nanorods grown by a microwave irradiation assisted method. Different substrates were used, namely Si, Ge, metal coated Si, PMMA coated Si and ITO coated glass, to examine…

To realize a chemical diffusion experiment for simple quantitative analysis of one-dimensional diffusion profiles requires the fabrication of a planar and chemically sharp interface between two phases, one serving as the diffusion source…

Nickel (II) oxide, NiO, a wide band gap Mott insulator characterized by strong Coulomb repulsion between d-electrons and displaying antiferromagnetic order at room temperature, has gained attention in recent years as a very promising…

NbO2 is a potential material for nanometric memristor devices, both in the amorphous and the crystalline form. We fabricated NbO2 thin films using RF-magnetron sputtering from a stoichiometric target. The as-deposited films were amorphous…