Related papers: Light absorption coefficient of an ordered array o…

Using an atomistic first principles approach, we investigate the band offset of the GaAs/AlxGa1-xAs heterojunctions for the entire range of the Al doping concentration 0<x<=1. We apply the coherent potential approach to handle the…

We study numerically the optical properties of low-buckled silicene and AB-stacked bilayer graphene quantum dots subjected to an external electric field, which is normal to their surface. Within the tight-binding model, the optical…

We summarize the attempts by our group and others to derive constraints on variations of fundamental constants over cosmic time using quasar absorption lines. Most upper limits reside in the range 0.5-1.5x10-5 at the 3sigma level over a…

We study (In,Ga)(As,Sb)/GaAs quantum dots embedded in a GaP (100) matrix, which are overgrown by a thin GaSb capping layer with variable thickness. Quantum dot samples are studied by temperature-dependent photoluminescence, and we observe…

Optical and thermal effects in asymmetric supercapacitors, whose active-carbon (AC) electrodes were embedded with nano-Si (n-Si) quantum dots (QD), are reported. We describe two structures: (1) p-n like, obtained by using a polyethylimine…

We theoretically study the effect of THz radiation on the linear optical absorption spectra of semiconductor structures. A general theoretical framework, based on non-equilibrium Green functions, is formulated, and applied to the…

The charge transfer from an adatom to a semiconductor substrate of one-dimensional quantum dot array is evaluated theoretically. Due to the Van Hove singularity in the density of electron states at the band edges, the charge transfer decay…

In this work, we study the absorption properties of AlN in the range of 1.5 - 5.5 eV, as well as the meta-stable change in absorption induced by ultraviolet (UV) irradiation (photochromism), and the restoration of the initial state under…

We consider the effects of electron-hole interaction, 2D confinement and applied electric field on direct allowed transitions in III-V semiconductors, with InGaAs as a study case. Instead of Coulomb interaction, we use Gaussian potential.…

The optical absorption spectra in the region of the \fd transition energies of epitaxial layers of of EuTe and \PbEuTe, grown by molecular beam epitaxy, were studied using circularly polarized light, in the Faraday configuration. Under…

The phase diagram of the half-filled spinless Holstein model for electrons interacting with quantum phonons is derived in three dimensions extending at finite temperature $T$ a variational approach introduced for the one-dimensional T=0…

To translate electrical into optical signals one uses the modulation of either the refractive index or the absorbance of a material by an electric field. Contemporary electroabsorption modulators (EAMs) employ the quantum confined Stark…

A theoretical study of Al(1-x)Ga(x)N, based on full-potential linearized augmented plane wave method, is used to investigate the variations in the bandgap, optical properties and non-linear behavior of the compound with the variation of Ga…

Absorption-line systems detected in high resolution quasar spectra can be used to compare the value of dimensionless fundamental constants such as the fine-structure constant, alpha, and the proton-to-electron mass ratio, mu = m_p/m_e, as…

The frequency-dependent conductivity is studied for the one-dimensional Hubbard model, using a selection rule, the Bethe ansatz, and symmetries associated with conservation laws. For densities where the system is metallic the absorption…

After a review of temperature-dependent experimental x-ray absorption near-edge structure (XANES) and related theoretical developments, we present the Al K-edge XANES spectra of corundum and beryl for temperature ranging from 300K to 930K.…

Linear and nonlinear optical absorption coefficients of the two-dimensional semiconductor ring in the perpendicular magnetic field $\bf B$ are calculated within independent electron approximation. Characteristic feature of the energy…

We observed room-temperature intersubband transitions at 1.26 microns in n-doped type-II In$_{0.3}$Ga$_{0.7}$As/AlAs strained quantum wells. An improved tight-binding model was used to optimize the structure parameters in order to obtain…

We have investigated the intersubband transitions of surface state electrons (SSE) on liquid $^3$He induced by microwave radiation at temperatures from 1.1 K down to 0.01 K. Above 0.4 K, the transition linewidth is proportional to the…

A new method, 'Configurationally-Resolved-Super-Transition-Arrays', for calculation of the spectral absorption coefficient in hot plasmas is presented. In the new method, the spectrum of each Super-Transition-Array is evaluated as the…