Related papers: Spin Hall effect from hybridized 3$d$-4$p$ orbital…
Spin-orbit torques (SOTs), which rely on spin current generation from charge current in a nonmagnetic material, promise an energy-efficient scheme for manipulating magnetization in magnetic devices. A critical topic for spintronic devices…
In this paper, we present the theoretical predication of a thermospin Hall effect, in which a transverse spin current can be generated in semiconductors in the presence of spin-orbit coupling by a frequency-dependent longitudinal…
We demonstrate that the spin Hall effect in a thin film with strong spin-orbit scattering can excite magnetic precession in an adjacent ferromagnetic film. The flow of alternating current through a Pt/NiFe bilayer generates an oscillating…
Magnetization switching by spin-orbit torque (SOT) via spin Hall effect represents as a competitive alternative to that by spin-transfer torque (STT) used for magnetoresistive random access memory (MRAM), as it does not require high-density…
We measured the spin-orbit torques (SOTs), current-induced switching, and domain wall (DW) motion in synthetic ferrimagnets consisting of Co/Tb layers with differing stacking order grown on a Pt underlayer. We find that the SOTs, magnetic…
The spin Hall effect and its inverse effect, caused by the spin orbit interaction, provide the interconversion between spin current and charge current. Since the effects make it possible to generate and manipulate spin current electrically,…
Spin-orbit torque (SOT) created by a spin current injected into a ferromagnet by an adjacent heavy metal represents an efficient tool for the excitation and manipulation of spin waves. Here we report the micromagnetic simulations describing…
We theoretically examine the spin-transfer torque in the presence of spin-orbit interaction (SOI) at impurities in a ferromagnetic metal on the basis of linear response theory. We obtained, in addition to the usual spin-transfer torque, a…
Using a multi-conduction-channel model, we redefined the micromechanism of spin Hall magnetoresistance (SMR). Four conduction channels are created by spin accumulation of nonpolarized electron flow at top, bottom, left and right interfaces…
We show theoretically that both intrinsic spin Hall effect (SHE) and orbital Hall effect (OHE) can arise in centrosymmetric systems through momentum-space orbital texture, which is ubiquitous even in centrosymmetric systems unlike spin…
The spin Hall magnetoresistance (SMR) phenomenon includes the fundamental physics of spin current, and originates from spin accumulation at an interface owing to the spin Hall effect. Although bilayers are the simplest structure exhibiting…
The magnetic spin Hall effect (MSHE) is an anomalous charge-to-spin conversion phenomenon which occurs in ferromagnetic materials. In contrast to the conventional spin Hall effect (SHE), being a time-reversal even effect, the magnetic…
The orbital Hall effect (OHE), resulting from non-trivial quantum geometry of 2D materials, has several potential advantages over the spin Hall effect (SHE), the latter being well known for its many applications in spintronics. Like the…
Pure spin current based research is mostly focused on ferromagnet (FM)/heavy metal (HM) system. Because of the high spin orbit coupling (SOC) these HMs exhibit short spin diffusion length and therefore possess challenges for device…
Spin-1 chiral semimetal is a new state of quantum matter hosting unconventional chiral fermions that extend beyond the common Dirac and Weyl fermions. B20-type CoSi is a prototypal material that accommodates such an exotic quasiparticle. To…
Spin Berry curvature characterizes the band topology as the spin counterpart of Berry curvature and is crucial in generating novel spintronics functionalities. By breaking the crystalline inversion symmetry, the spin Berry curvature is…
The effect of spin-orbit interaction on electron transport properties of a cross-junction structure is studied. It is shown that it results in spin polarization of left and right outgoing electron waves. Consequently, incoming electron wave…
The manipulation of magnetic properties using either electrical currents or gate bias is the key of future high-impact nanospintronics applications such as spin-valve read heads, non-volatile logic, and random-access memories. The current…
It has been shown that the spin Hall effect from heavy transition metals can generate sufficient spin-orbit torque and further produce current-induced magnetization switching in the adjacent ferromagnetic layer. However, if the…
Since the discovery of the spin orbit torque (SOT) induced by spin Hall effect in heavy metals, much effort has been devoted to understanding the mechanism of the charge-to-spin conversion as well as to developing new schemes for high…