Related papers: A Thermodynamic Perspective of Negative-capacitanc…
We investigate the non-resonant all-optical switching of magnetization. We treat the inverse Faraday effect (IFE) theoretically in terms of the spin-selective optical Stark effect for linearly or circularly polarized light. In the dilute…
The elegant simplicity of the device concept and the urgent need for a new "transistor" at the twilight of Moore's law have inspired many researchers in industry and academia to explore the physics and technology of negative capacitance…
How to control collectively ordered electronic states is a core interest of condensed matter physics. We report an electric field controlled reversible transition from superconductor to ferromagnetic insulator in (Li,Fe)OHFeSe thin flake…
Sub-threshold swing (S) defines the sharpness of ON-OFF switching of a Field Effect Transistor (FET) with S=0 corresponding to abrupt switching characteristics. While thermodynamics dictates S to be greater than or equal to 60mV/dec for…
We show experimental switching data on microscale capacitors of lead-zirconate-titanate (PZT), which reveal time-resolved domain behavior during switching on a 100-ns scale. For small circular capacitors, an unswitched domain remains in the…
The current through ferromagnetic single-electron transistors (SET's) is considered. Using path integrals the linear response conductance is formulated as a function of the tunnel conductance vs. quantum conductance and the temperature vs.…
Using the modified Landau-Ginsburg-Devonshire thermodynamic theory, it is found that the coupling between stress gradient and polarization, or flexoelectricity, has significant effect on ferroelectric properties of epitaxial thin films,…
We re-examine the nature of the ground states of bilayer graphene at odd integer filling factors within a simplified model of nearly degenerate $n=0$ and $n=1$ Landau levels. Previous Hartree-Fock studies have found that ferroelectric…
The electron fluid model in plasmonic field effect transistor (FET) operation is related to the behavior of a radio-frequency (RF) cavity. This new understanding led to finding the relationships between physical device parameters and…
The switching dynamics of a single-domain BiFeO$_3$ thin films is investigated through combining the dynamics of polarization and Neel vector. The evolution of the ferroelectric polarization is described by the Landau-Khalatnikov (LK)…
The thermodynamics and kinetics of tip-induced polarization switching in Piezoresponse Force Microscopy in the presence of surface charge defects is studied using the combination of analytical and numerical techniques. The signature of the…
Spin field-effect transistors (SFETs) are promising candidates for low-power spin-based electronics, yet existing realizations that rely on spin-orbit coupling are constrained by limited material choices and short spin-coherence lengths.…
Exchange bias training effect in ferromagnetic/antiferromagnetic bilayers is investigated. In some systems the evolution of the exchange bias field $H_E$ with the number of cycle $n$ cannot be fitted by the empirical $1/\sqrt{n}$ function.…
The calculation of the polarization in ferroelectric thin films is performed using an analytical solution of the Euler-Lagrange differential equation with boundary conditions with different extrapolation lengths of positive sign on the…
It is well known that conventional Field Effect Transistors (FET's) require a change in the channel potential of at least 60 mV at 300K to effect a change in the current by a factor of ten, and this minimum subthreshold slope S puts a lower…
We construct a comprehensive theory of the electrodynamic response of ferroelectric ultra-thin films containing periodic domain textures (PDT) with 180{\deg} polarization-oriented domains. The focal point of the theory is the…
The electronic transport properties of heavy-fermion systems were calculated based on a semiphenomenological approach to the lattice non-crossing approximation in the limit of infinite local correlations augmented by crystal-field effects.…
In organic field effect transistors (FETs), charges move near the surface of an organic semiconductor, at the interface with a dielectric. In the past, the nature of the microscopic motion of charge carriers -that determines the device…
We propose an energy-based framework to analyze the statics and dynamics of a ferroelectric negative capacitance-hybrid Microelectromechanical System (MEMS) actuator. A mapping function that relates the charge on the ferroelectric to…
We study theoretically the coupled multiferroic dynamics of one-dimensional ferroelectric/ferromagnet chains driven by harmonic magnetic and electric fields as a function of the chain length. A linear magnetoelectric coupling is dominated…