Related papers: Scale-invariant large nonlocality in polycrystalli…
Under the application of a force, a material will deform and, hence, the crystal lattice will experience strain. This induced strain will alter the electronic properties of the material. In particular, strain in graphene generates an…
Magnetic gates in close proximity to graphene can induce ferromagnetic correlations. We study the effect of such induced magnetization dependent Zeeman splittings on the graphene transport properties. We estimate that induced spin…
The quantum Hall effect is the seminal example of topological protection, as charge carriers are transmitted through one-dimensional edge channels where backscattering is prohibited. Graphene has made its marks as an exceptional platform to…
We uncover two anomalous features in the nonlocal transport behavior of two-dimensional metallic materials with spin-orbit coupling. Firstly, the nonlocal resistance can have negative values and oscillate with distance, even in the absence…
In the presence of crossed electric and magnetic fields, a graphene ribbon has chiral states running along sample edges and along boundaries between $p$-doped and $n$-doped regions. We here consider the scattering of edge states into…
The weak spin-orbit interaction in graphene was predicted to be increased, e.g., by hydrogenation. This should result in a sizable spin Hall effect (SHE). We employ two different methods to examine the spin Hall effect in weakly…
Superlattices (SLs) in monolayer and bilayer graphene, formed by spatially periodic potential variations, lead to a modified bandstructure with extra finite-energy and zero-energy Dirac fermions with tunable anisotropic velocities. We…
We discuss the quantum Hall effect on a single-layer graphene in the framework of noncommutative (NC) phase space. We find it induces a shift in the Hall resistivity. Furthermore, comparison with experimental data reveals an upper bound on…
We apply Laughlin's gauge argument to analyze the $\nu=0$ quantum Hall effect observed in graphene when the Fermi energy lies near the Dirac point, and conclude that this necessarily leads to divergent bulk longitudinal resistivity in the…
We report systematic theoretical studies of the inverse Faraday effect in materials with massless Dirac fermions, both in two dimensions such as graphene and surface states in topological insulators, and in three dimensions such as Dirac…
We investigate the transport properties of high-quality single-layer graphene, epitaxially grown on a 6H-SiC(0001) substrate. We have measured transport properties, in particular charge carrier density, mobility, conductivity and…
We present a molecular modeling study analyzing nanometer-scale strain variations in graphene as a function of externally applied tensile strain. We consider two different mechanisms that could underlie nanometer-scale strain variations:…
We develop a theory of the valley Hall effect in high-quality graphene samples, in which strain fluctuation-induced random gauge potentials have been suggested as the dominant source of disorder. We find a near-quantized value of valley…
Because of the spin and Dirac-valley degrees of freedom, graphene allows the observation of one-, two- or four-component fractional quantum Hall effect in different parameter regions. We argue that some, though not all, apparently puzzling…
We report on the observation of strong backscattering of charge carriers in the quantum Hall regime of polycrystalline graphene grown by chemical vapor deposition, which alters the accuracy of the Hall resistance quantization. The…
In gapped Dirac materials, the topological current associated with each valley can flow in opposite directions creating long-range charge-neutral valley currents. We report valley currents in hBN/bilayer-graphene heterostructures with an…
The observation of micron size spin relaxation makes graphene a promising material for applications in spintronics requiring long distance spin communication. However, spin dependent scatterings at the contact/graphene interfaces affect the…
We report several quantum interference effects in graphene grown by chemical vapor deposition. A crossover between weak localization and weak antilocalization effects is observed when varying the gate voltage and we discuss the underlying…
Observations of electron-hole asymmetry in transport through graphene devices at high magnetic field challenge prevalent models of the graphene quantum Hall effect. Here, we study this asymmetry both in conventional magnetotransport and in…
We develop the theory of quantum friction in two-dimensional topological materials. The quantum drag force on a metallic nanoparticle moving above such systems is sensitive to the non-trivial topology of their electronic phases, shows a…