Related papers: Current-induced spin polarization in InGaAs and Ga…
We investigate numerically the spin polarization of the current in the presence of Rashba spin-orbit interaction in a T-shaped conductor proposed by A.A. Kiselev and K.W. Kim (Appl. Phys. Lett. {\bf 78} 775 (2001)). The recursive Green…
We study the tunneling of conduction electrons through a (110)-oriented single-barrier heterostructure grown from III-V semiconductor compounds. It is shown that, due to low spatial symmetry of such a barrier, the tunneling current through…
The distribution is calculated of the electron spin polarization under current-driven spin injection from a probe to a ferromagnetic film. It is shown that the main parameters determining difference of the spin polarization from the…
A quantitative investigation of spin-pumping-induced spin-transport in n-GaAs was conducted at room temperature (RT). GaAs has a non-negligible spin orbit interaction, so that electromotive force due to the inverse spin Hall effect (ISHE)…
We theoretically investigate current-induced spin polarization in disordered topological insulator thin films with broken inversion symmetry under an applied in-plane electric field. Utilizing the Kubo formalism within the self-consistent…
We derive boundary conditions for the electrically induced spin accumulation in a finite, disordered 2D semiconductor channel. While for DC electric fields these boundary conditions select spatially constant spin profiles equivalent to a…
We present gauge-invariant theory of the dynamic inverse spin Hall effect driven by the spin--orbit interaction in metallic systems. Charge conservation is imposed diagrammatically by including vertex corrections. We show the charge current…
The mechanisms of the magnetization switching of magnetic multilayers driven by a current are studied by including exchange interaction between local moments and spin accumulation of conduction electrons. It is found that this exchange…
We have made quantitative measurements of the spin polarization of two-dimensional (2D) GaAs (100) electrons and GaAs (311)A holes, as a function of an in-plane magnetic field. The functional form of the in-plane magnetoresistance is shown…
We studied the electric current induced in a two-dimensional electron gas by the spin current, in the presence of Rashba and cubic Dresselhaus spin-orbit interactions. We found out that the factor relating these currents is not universal,…
We have investigated the effect of the gate voltage on spin relaxation in an Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As heterostructure. The study is motivated by a recent proposal for a non-ballistic spin field effect transistor that utilizes the…
The Rashba and Dresselhaus spin-orbit interactions are both shown to yield the low temperature spin-Hall effect for strongly localized electrons coupled to phonons. A frequency-dependent electric field ${\bf E}(\omega)$ generates a…
The quasiclassical Green function formalism is used to describe charge and spin dynamics in the presence of spin-orbit coupling. We review the results obtained for the spin Hall effect on restricted geometries. The role of boundaries is…
We calculate spin Hall conductivities in the two dimensional electron systems with Rashba spin-orbit interaction. The salient feature is that, apart from the usual spin-Hall conductivity \sigma^z_{xy} which corresponds to the induction of…
We consider the magnetic response of a two-dimensional electron gas (2DEG) with a spin-orbit interaction to a long-wave-length electromagnetic excitation. We observe that the transverse electric field creates spin polarization perpendicular…
Anomalous spin Hall effects that belong to the intrinsic type in Dresselhaus (110) quantum wells are discussed. For the out-of-plane spin component, antisymmetric current-induced spin polarization induces opposite spin Hall accumulation,…
Using a tight-biding model, we elaborate that the previously discovered out-of-plane polarized helical edge spin current caused by Rashba spin-orbit coupling can be attributed to the fact that in a strip geometry, a positive momentum…
The generation and manipulation of carrier spin polarization in semiconductors solely by electric fields has garnered significant attention as both an interesting manifestation of spin-orbit physics as well as a valuable capability for…
We study ballistic transport through semiconductor quantum point contact systems under different confinement geometries and applied fields. In particular, we investigate how the {\em lateral} spin-orbit coupling, introduced by asymmetric…
A drift-diffusion model for spin-charge transport in spin-polarized {\it p-n} junctions is developed and solved numerically for a realistic set of material parameters based on GaAs. It is demonstrated that spin polarization can be injected…