Related papers: Confinement sensitivity in quantum dot singlet-tri…
An electron spin qubit in a silicon donor atom is a promising candidate for quantum information processing because of its long coherence time. To be sensed with a single-electron transistor, the donor atom is usually located near an…
We study two-electron states confined in two coupled quantum dots formed by a short-range potential in a two-dimensional topological insulator. It is shown that there is a fairly wide range of the system parameters, where the ground state…
We present a numerical study of spin relaxation in a semiclassical electron ensemble in a large ballistic quantum dot. The dot is defined in a GaAs/AlGaAs heterojunction system with a two-dimensional electron gas, and relaxation occurs due…
An alternating electric field, applied to a quantum dot, couples to the electron spin via the spin-orbit interaction. We analyze different types of spin-orbit coupling known in the literature and find two efficient mechanisms of spin…
In a GaAs single quantum dot, the relaxation time T_{1} between spin triplet and singlet states has been measured for the last few even number of electrons. The singlet-triplet energy separation E_{ST} is tuned as a control parameter for…
We study the anisotropic orbital effect in the electric field tunability of the phonon induced spin-flip rate in quantum dots (QDs). Our study shows that anisotropic gate potential enhances the spin-flip rate and reduces the level crossing…
In symmetric quantum dots (QDs), it is well known that the spin-hot spot (i.e., the cusp-like structure due to the presence of degeneracy near the level or anticrossing point) is present for the pure Rashba case but is absent for the pure…
We present a theoretical study of the spectrum of electrons confined in triple concentric rings. An unusual ordering and rich variety of angular momentum transitions are found that depend on the coupling between the rings and the…
We investigate theoretically spin relaxation in heavy hole quantum dots in low external magnetic fields. We demonstrate that two-phonon processes and spin-orbit interaction are experimentally relevant and provide an explanation for the…
We investigate the singlet-triplet relaxation process of a two electron silicon quantum dot. In the absence of a perpendicular magnetic field, we find that spin-orbit coupling is not the main source of singlet-triplet relaxation. Relaxation…
The phonon-induced spin relaxation in a two-dimensional quantum dot embedded inside a semiconductor slab is investigated theoretically. An enhanced relaxation rate is found due to the phonon van Hove singularities. Oppositely, a vanishing…
We study two-electron singlet-triplet relaxation of donor-bound electrons in Silicon. Hyperfine interaction of the electrons with the phosphorus (P) nuclei, in combination with the electron-phonon interaction, lead to relaxation of the…
We study the effect of the Dresselhaus spin-orbit interaction on the electronic states and spin relaxation rates of cylindrical quantum dots defined on quantum wires having wurtzite lattice structure. The linear and cubic contributions of…
We have studied direct and Raman processes of the decay of electron spin states in a quantum dot via radiation of phonons corresponding to elastic twists. Universal dependence of the spin relaxation rate on the strength and direction of the…
In this paper, a detailed analysis of anisotropic effects on the phonon induced spin relaxation rate in III-V semiconductor quantum dots (QDs) is carried out. We show that the accidental degeneracy due to level crossing between the first…
Spins in gate-defined silicon quantum dots are promising candidates for implementing large-scale quantum computing. To read the spin state of these qubits, the mechanism that has provided the highest fidelity is spin-to-charge conversion…
We study the effect of the spin-orbit interaction on heavy holes confined in a double quantum dot in the presence of a magnetic field of arbitrary direction. Rich physics arise as the two hole states of different spin are not only coupled…
We calculate electron and nuclear spin relaxation rates in a quantum dot due to the combined action of Nyquist noise and electron-nuclei hyperfine or spin-orbit interactions. The relaxation rate is linear in the resistance of the gate…
The spin relaxation time $T_{1}$ in zinc blende GaN quantum dot is investigated for different magnetic field, well width and quantum dot diameter. The spin relaxation caused by the two most important spin relaxation mechanisms in zinc…
Gate geometry and bias asymmetry can be used to engineer spin dynamics in gate-defined Ge hole quantum dots by reshaping the confinement potential and driving transitions between distinct confinement regimes. In this work, we show that…