Related papers: Resistive switching in MoSe$_{2}$/BaTiO$_{3}$ hybr…
Complex oxide systems have attracted considerable attention because of their fascinating properties, including the magnetic ordering at the conducting interface between two band insulators, such as LaAlO3 (LAO) and SrTiO3 (STO). However,…
Resistive and magnetization properties have been measured in BiS$_2$-based samples CeO$_{1-x}$F$_{x}$BiS$_{2}$ with a systematic substitution of O with F (0 $<$ x $<$ 0.6). In contrast to the band structure calculations, it is found that…
We report on the reversible, nonvolatile and polarity dependent resistive switching between superconductor and insulator states at the interfaces of a Au/YBa$_2$Cu$_3$O$_{7-\delta}$ (YBCO)/Au system. We show that the superconducting state…
Polarization induced spin switching of atoms in magnetic materials opens for possibilities to design and develop advanced spintronic devices, in particular, storage devices where the magnetic state can be controlled by an electric field. We…
We employ density functional theory plus dynamical mean field theory and identify the physical origin of why two layers of SrVO$_3$ on a SrTiO$_3$ substrate are insulating: the thin film geometry lifts the orbital degeneracy which in turn…
Transition metal oxides (TMOs) exhibit many emergent phenomena ranging from high-temperature superconductivity and giant magnetoresistance to magnetism and ferroelectricity. In addition, when TMOs are interfaced with each other, new…
We present the self-interaction corrected local spin density (SIC-LSD) electronic structure and total energy calculations, leading also to valencies of the ground state configurations, for the half-metallic double perovskites such as…
Using a combination of first-principles density functional theory (DFT) calculations and exact diagonalization studies of a first-principles derived model, we carry out a microscopic analysis of the magnetic properties of the half-metallic…
Stable and switchable polarization of ferroelectric materials opens a possibility to electrically control their functional behavior. A particularly promising approach is to employ ferroelectric tunnel junctions where the polarization…
In ferroelectric materials, spontaneous symmetry breaking leads to a switchable electric polarization, which offers significant promise for nonvolatile memories. In particular, ferroelectric tunnel junctions (FTJs) have emerged as a new…
A caged compound CeOs2Al10, crystallizing in the orthorhombic YbFe2Al10-type structure, undergoes a mysterious phase transition at T_0=29 K. We report the results of electron diffraction, magnetization, and magnetoresistance for single…
BaTiO$_3$ (BTO) is a prototypical perovskite ferroelectric, whose dielectric permittivity and loss spectra -- which are strongly temperature and frequency dependent -- include contributions from inhomogeneous polarization patterns, with…
We consider a two-dimensional magnetic tunnel junction of the FM/I/QW(FM+SO)/I/N structure, where FM, I and QW(FM+SO) stand for a ferromagnet, an insulator and a quantum wire (QW) with both magnetic ordering and Rashba spin-orbit (SOC),…
This work demonstrates that porous helical WOx architectures enable a distinct low-power regime for planar ITO/WOx/ITO resistive random-access devices. While thin film and helical devices behave similarly at a 5 mA compliance, only helical…
We report a detailed analysis of magneto-transport properties of top- and back-gated LaAlO$_3$/SrTiO$_3$ heterostructures. Efficient modulation in magneto-resistance, carrier density, and mobility of the two-dimensional electron liquid…
The high contact resistance between MoS$_2$ and metals hinders its potential as an ideal solution for overcoming the short channel effect in silicon-based FETs at sub-3nm scales. We theoretically designed a MoS$_2$-based transistor,…
We demonstrate that the physical mechanism behind electroresistive switching in oxide Schottky systems is electroformation, as in insulating oxides. Negative resistance shown by the hysteretic current-voltage curves proves that impact…
Molecular beam epitaxy (MBE) is a promising synthesis technique for both heterostructure growth and epitaxial integration of ferroelectric BaTiO3. However, a direct measurement of the remnant polarization (P_r) has not been previously…
The layered oxychalcogenide semiconductor Bi$_2$O$_2$Se (BOS) hosts a multitude of unusual properties including high electron mobility. Owing to similar crystal symmetry and lattice constants, the perovskite oxide SrTiO$_3$ (STO) has been…
We report on the longitudinal magnetoresistance (MR) in thin metal films on an Ising-type antiferromagnetic insulator, Na5Co15.5Te6O36 (NCTO). Steep changes in the MR spectra with hysteresis were observed at spin-flip transitions driven by…