Related papers: Atomically flat single terminated oxide substrate …
Chalcogenide phase-change materials (PCMs) are a leading candidate for advanced memory and computing applications. Epitaxial-like growth of chalcogenide thin films at the wafer scale is important to guarantee the homogeneity of the thin…
A comprehensive bulk and surface investigation of high-quality In$_2$O$_3$(001) single crystals is reported. The transparent-yellow, cube-shaped single crystals were grown using the flux method. Inductively coupled plasma mass spectrometry…
Surface morphology of the substrate and bottom layers plays a critical role in the epitaxial growth of oxide thin films. Here, we report on the self-organized formation of a step-terrace structure in SrRuO3 (SRO) thin films grown using…
We report on growth-mode transitions in the growth of SrRuO3 thin films on atomically flat Ti4+ single-terminated SrTiO3 (111) substrates, investigated by reflection high-energy electron diffraction and atomic force microscopy. Over the…
We have investigated how the recently-developed water-leaching method for atomically-flat SrTiO3 (STO) substrates affects the transport properties of LaAlO3 (LAO) and STO heterointerfaces. Using pulsed laser deposition at identical growth…
We have investigated ten standard single crystal substrates of complex oxides on the account of their applicability in the Raman spectroscopy based thin film research. In this study we suggest a spectra normalization procedure that utilizes…
Three different film systems have been systematically investigated to understand the effects of strain and substrate constraint on the phase transitions of perovskite films. In SrTiO$_3$ films, the phase transition temperature T$_C$ was…
In this work we investigate influence of substrate temperature on the surface morphology for substrate coverage below one monolayer. The model of film growth is based on random deposition enriched by limited surface diffusion. Also…
Superconducting epitaxial FeSe0.5Te0.5 thin films were prepared on SrTiO3 (001) substrates by pulsed laser deposition. The high purity of the phase, the quality of the growth and the epitaxy were studied with different experimental…
Properties of complex oxide thin films can be tuned over a range of values as a function of mismatch, composition, orientation, and structure. Here, we report a strategy for growing structured epitaxial thermoelectric thin films leading to…
Atomically sharp epitaxial growth of Bi2Se3 films is achieved on Si (111) substrate with MBE (Molecular Beam Epitaxy). Two-step growth process is found to be a key to achieve interfacial-layer-free epitaxial Bi2Se3 films on Si substrates.…
Suspended micro-structures based on complex oxides relies on surface micro-machining processes such as those based on sacrificial layers. These processes prevent to physically access the microstructures from both sides, as substantial part…
Releasing the epitaxial oxide heterostructures from substrate constraints leads to the emergence of various correlated electronic phases and paves the way for integrations with advanced semiconductor technologies. Identifying a suitable…
The durability of passivable metals and alloys is often limited by the stability of the surface oxide film, the passive film, providing self-protection against corrosion in aggressive environments. Improving this stability requires to…
Unlike widely explored complex oxide heterostructures grown along [001], the study of [111]-oriented heterointerfaces are very limited thus far. One of the main challenges is to overcome the polar discontinuity that hinders the epitaxy of…
The release process for the fabrication of freestanding oxide microstructures relies on appropriate, controllable and repeatable wet etching procedures. SrTiO3 is among the most employed substrates for oxide thin films growth and can be…
The pseudo-cubic lattice parameters of rare-earth (RE) scandate, REScO3, single crystals grown by the Czochralski technique with RE=Dy to Pr lie between about 3.95 and 4.02 Angstrom. These crystals are the only available perovskite…
A chemical-free technique for fabricating submicron complex oxide structures has been developed based on selective epitaxial growth. The crystallinity and hence the conductivity of the complex oxide is inhibited by amorphous SrTiO3 (STO).…
Tantalum dioxide (TaO2) is a metastable tantalum compound. Here, we report the epitaxial stabilization of TaO2 on Al2O3 (1-102) (r-plane sapphire) substrates using suboxide molecular-beam epitaxy (MBE) and thermal laser epitaxy (TLE),…
Epitaxial growth of thin-film heterostructures is generally considered the most successful procedure to obtain interfaces of excellent structural and electronic quality between three-dimensional materials. However, these interfaces can only…