Conducting LaAlO3/SrTiO3 heterointerfaces on atomically flat substrates prepared by deionized-water

J. G. Connell; J. Nichols; J. H. Gruenewald; D. -W. Kim; S. S. A. Seo

doi:10.1038/srep23621

Conducting LaAlO3/SrTiO3 heterointerfaces on atomically flat substrates prepared by deionized-water

Materials Science 2016-04-04 v1 Mesoscale and Nanoscale Physics Strongly Correlated Electrons

Authors: J. G. Connell , J. Nichols , J. H. Gruenewald , D. -W. Kim , S. S. A. Seo

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Abstract

We have investigated how the recently-developed water-leaching method for atomically-flat SrTiO3 (STO) substrates affects the transport properties of LaAlO3 (LAO) and STO heterointerfaces. Using pulsed laser deposition at identical growth conditions, we have synthesized epitaxial LAO thin-films on two different STO substrates, which are prepared by water-leaching and buffered hydrofluoric acid (BHF) etching methods. The structural, transport, and optical properties of LAO/STO heterostructures grown on water-leached substrates show the same high-quality as the samples grown on BHF-etched substrates. These results indicate that the water-leaching method can be used to grow complex oxide heterostructures with atomically well-defined heterointerfaces without safety concerns.

Keywords

LaAlO3/SrTiO3 heterointerface atomically flat substrate water-leaching method pulsed laser deposition transport properties epitaxial thin film

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@article{arxiv.1604.00352,
  title  = {Conducting LaAlO3/SrTiO3 heterointerfaces on atomically flat substrates prepared by deionized-water},
  author = {J. G. Connell and J. Nichols and J. H. Gruenewald and D. -W. Kim and S. S. A. Seo},
  journal= {arXiv preprint arXiv:1604.00352},
  year   = {2016}
}

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10 pages, 4 figures

Conducting LaAlO3/SrTiO3 heterointerfaces on atomically flat substrates prepared by deionized-water

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