Atomically flat interface between a single-terminated LaAlO3 substrate and SrTiO3 thin film is insulating

Z. Q. Liu; Z. Huang; W. M. Lü; K. Gopinadhan; X. Wang; A. Annadi; T. Venkatesan; Ariando

doi:10.1063/1.3688772

Atomically flat interface between a single-terminated LaAlO3 substrate and SrTiO3 thin film is insulating

Materials Science 2012-05-09 v2 Strongly Correlated Electrons

Authors: Z. Q. Liu , Z. Huang , W. M. Lü , K. Gopinadhan , X. Wang , A. Annadi , T. Venkatesan , Ariando

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Abstract

The surface termination of (100)-oriented LaAlO3 (LAO) single crystals was examined by atomic force microscopy and optimized to produce a single-terminated atomically flat surface by annealing. Then the atomically flat STO film was achieved on a single-terminated LAO substrate, which is expected to be similar to the n-type interface of two-dimensional electron gas (2DEG), i.e., (LaO)-(TiO2). Particularly, that can serve as a mirror structure for the typical 2DEG heterostructure to further clarify the origin of 2DEG. This newly developed interface was determined to be highly insulating. Additionally, this study demonstrates an approach to achieve atomically flat film growth based on LAO substrates.

Keywords

oxide heterostructures oxide interfaces surface science

Cite

@article{arxiv.1205.1305,
  title  = {Atomically flat interface between a single-terminated LaAlO3 substrate and SrTiO3 thin film is insulating},
  author = {Z. Q. Liu and Z. Huang and W. M. Lü and K. Gopinadhan and X. Wang and A. Annadi and T. Venkatesan and Ariando},
  journal= {arXiv preprint arXiv:1205.1305},
  year   = {2012}
}

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4 pages, 3 figures

Atomically flat interface between a single-terminated LaAlO3 substrate and SrTiO3 thin film is insulating

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