Related papers: Resistive communications based on neuristors
Resistive switching (RS) devices, based on soft materials such as organic, biomolecules as well as natural plant extracts etc., has emerged as a promising alternative to the conventional memory technologies. They offer simple device…
Inspired by the human brain, there is a strong effort to find alternative models of information processing capable of imitating the high energy efficiency of neuromorphic information processing. One possible realization of cognitive…
Over the last decade, memristive devices have been widely adopted in computing for various conventional and unconventional applications. While the integration density, memory property, and nonlinear characteristics have many benefits,…
Memristors, memcapacitors, and meminductors, collectively called memelements, represent an innovative generation of circuit elements whose properties depend on the state and history of the system. The hysteretic behavior of one of their…
In this paper, we introduce some interesting features of a memristor CNN (Cellular Neural Network). We first show that there is the similarity between the dynamics of memristors and neurons. That is, some kind of flux-controlled memristors…
A memristor is a nonlinear two-terminal electrical element that incorporates memory features and nanoscale properties, enabling us to design very high-density artificial neural networks. To enhance the memory property, we should use…
Metallic oxides encased within Metal-Insulator-Metal (MIM) structures can demonstrate both unipolar and bipolar switching mechanisms, rendering them the capability to exhibit a multitude of resistive states and ultimately function as memory…
This paper discusses a logical operation of multi-memories that consist of coupled nonlinear micro-electro-mechanical systems (MEMS) resonators. A MEMS resonator shows two coexisting stable states when nonlinear responses appear. Previous…
Resistance switching random access memory (ReRAM), with the ability to repeatedly modulate electrical resistance, has been highlighted as a feasible high-density memory with the potential to replace negative-AND (NAND) flash memory. Such…
The development prospects of memristive elements for non-volatile memory with use of the metal-dielectric-metal sandwich structures with a thin oxide layer are due to the possibility of reliable forming the sustained functional states with…
We suggest a novel methodology to obtain a digital representation of analog signals and to perform its back-conversion using memristive devices. In the proposed converters, the same memristive systems are used for two purposes: as elements…
Tunneling junctions containing no ferromagnetic elements have been fabricated and we show that distinct resistance states can be set by field cooling the devices from above the N\'eel along different orientations. Variations of the…
The memristor can be used as non volatile memory (NVM) and for emulating neuron behavior. It has the ability to switch between low resistance $R_{on}$ and high resistance values $R_{off}$, and exhibit the synaptic dynamic behaviour such as…
We suggest a possible realization of a solid-state memory capacitive (memcapacitive) system. Our approach relies on the slow polarization rate of a medium between plates of a regular capacitor. To achieve this goal, we consider a…
Neuromorphic devices, with their distinct advantages in energy efficiency and parallel processing, are pivotal in advancing artificial intelligence applications. Among these devices, memristive transistors have attracted significant…
Future development of the modern nanoelectronics and its flagships internet of things and artificial intelligence as well as many related applications is largely associated with memristive elements. This technology offers a broad spectrum…
The interplay between nonlinear dynamic systems and noise has proved to be of great relevance in several application areas. In this presentation, we focus on the areas of information transmission and storage. We review some recent results…
Memristors have been suggested as neuromorphic computing elements. Spike-time dependent plasticity and the Hodgkin-Huxley model of the neuron have both been modelled effectively by memristor theory. The d.c. response of the memristor is a…
Passing current at given threshold voltages through a metal/insulator/metal sandwich structure device may change its resistive state. Such resistive switching is unique to nanoscale devices, but its underlying physical mechanism remains…
In this article, we first point out a missing active-device while providing its theoretical definition and impact on electronics. This type of active devices has an inverse functionality of transistors, and is suggested to be called…