Related papers: Security Protection for Magnetic Tunnel Junction
Stochastic magnetic tunnel junctions (s-MTJ) is a promising component of probabilistic bit (p-bit), which plays a pivotal role in probabilistic computers. For a standard cell structure of the p-bit, s-MTJ is desired to be insensitive to…
Machine learning implements backpropagation via abundant training samples. We demonstrate a multi-stage learning system realized by a promising non-volatile memory device, the domain-wall magnetic tunnel junction (DW-MTJ). The system…
The vast amount of data generated by camera sensors has prompted the exploration of energy-efficient processing solutions for deploying computer vision tasks on edge devices. Among the various approaches studied, processing-in-pixel…
Magnetic tunnel junctions (MTJs) are key elements in practical spintronics, enabling not only conventional tasks such as data storage, transmission, and processing but also the implementation of compute-in-memory processing elements,…
With the advent of clean energy awareness and systems that rely on extensive battery usage, the community has seen an increased interest in the development of more complex and secure Battery Management Systems (BMS). In particular, the…
Power consumption is the main limitation in the development of new high performance random access memory for portable electronic devices. Magnetic RAM (MRAM) with CoFeB/MgO based magnetic tunnel junctions (MTJs) is a promising candidate for…
All-oxide magnetic tunnel junctions (MTJs) incorporating functional materials as insulating barriers have the potential of becoming the founding technology for novel multi-functional devices. We investigate, by first-principles density…
We investigate spin-dependent conductance across a magnetic tunnel junction (MTJ) including a ferromagnetic insulating barrier. The MTJ consists of two half-metallic ferromagnetic La2/3Sr1/3MnO3 (LSMO) manganites as electrodes and La2NiMnO6…
Magnetic tunnel junctions (MTJs) are key components of spintronic devices, such as magnetic random-access memories. Normally, MTJs consist of two ferromagnetic (FM) electrodes separated by an insulating barrier layer. Their key functional…
The desire to empower resource-limited edge devices with computer vision (CV) must overcome the high energy consumption of collecting and processing vast sensory data. To address the challenge, this work proposes an energy-efficient…
Physical attacks form one of the most severe threats against secure computing platforms. Their criticality arises from their corresponding threat model: By, e.g., passively measuring an integrated circuit's (IC's) environment during a…
The emerging Spin Transfer Torque Magnetic Tunnel Junction (STT-MTJ) technology exhibits interesting stochastic behavior combined with small area and low operation energy. It is, therefore, a promising technology for security applications,…
Magnetic tunnel junctions (MTJs), which are the fundamental building blocks of spintronic devices, have been used to build true random number generators (TRNGs) with different trade-offs between throughput, power, and area requirements.…
High impedance (about 1 Megaohm) magnetic tunnel junctions (MTJs) are used to observe and record the magnetodynamics of the nanomagnets that form the junctions themselves. To counteract the bandwidth limitations caused by the high impedance…
We demonstrate that thermally stable perpendicular magnetic tunnel junctions (pMTJs), widely used in spin-transfer torque magnetic random-access memory, can be actuated with nanosecond pulses to exhibit tunable stochastic behavior. This…
Low-power designs are a necessity with the increasing demand of portable devices which are battery operated. In many of such devices the operational speed is not as important as battery life. Logic-in-memory structures using nano-devices…
We study moving-target defense (MTD) that actively perturbs transmission line reactances to thwart stealthy false data injection (FDI) attacks against state estimation in a power grid. Prior work on this topic has proposed MTD based on…
Perpendicular magnetic tunnel junctions (MTJ) with a bottom pinned reference layer and a composite free layer (FL) are investigated. Different thicknesses of the FL were tested to obtain an optimal balance between tunneling…
Spin transfer torque magnetic random access memory (STT-MRAM) is a promising candidate for next generation memory as it is non-volatile, fast, and has unlimited endurance. Another important aspect of STT-MRAM is that its core component, the…
Recently, moving target defence (MTD) has been proposed to thwart false data injection (FDI) attacks in power system state estimation by proactively triggering the distributed flexible AC transmission system (D-FACTS) devices. One of the…