Related papers: Reassessing Graphene Absorption and Emission Spect…
The ultrafast dynamics of excited carriers in graphene is closely linked to the Dirac spectrum and plays a central role for many electronic and optoelectronic applications. Harvesting energy from excited electron-hole pairs, for instance,…
We point out that plasmons in doped graphene simultaneously enable low-losses and significant wave localization for frequencies below that of the optical phonon branch $\hbar\omega_{Oph}\approx 0.2$ eV. Large plasmon losses occur in the…
We examine an intrinsic graphene connected to the phonon thermostat at temperature T under irradiation of thermal photons with temperature T_r, other than T. The distribution of nonequilibrium electron-hole pairs was obtained for the cases…
Fast modulation and switching of light at visible and near-infrared (vis-NIR) frequencies is of utmost importance for optical signal processing and sensing technologies. No fundamental limit appears to prevent us from designing…
Graphene is promising for nanoscale, efficient, ultra-fast photo- and opto-electronic devices because of its remarkable electrical and optical properties, such as fast electron relaxation and heat dissipation. Here, we realize…
We extend the electrodynamics of two dimensional electron gases to account for the extrinsic spin Hall effect (SHE). The theory is applied to doped graphene decorated with a random distribution of absorbates that induce spin-orbit coupling…
We develop a theory for the energy relaxation of hot Dirac fermions in graphene. We obtain a generic expression for the energy relaxation rate due to electron-phonon interaction and calculate the power loss due to both optical and acoustic…
Scattering between individual charges and collective modes in materials governs fundamental phenomena such as electrical resistance, energy dissipation, switching between different phases, and ordering. The study of such scattering requires…
The electrochemical hydrogenation of graphene induces a robust and reversible conductor-insulator transition, of strong interest in logic-and-memory applications. However, its mechanism remains unknown. Here we show that it proceeds as a…
We experimentally observe the fast relaxation and relatively slow recombination dynamics of photogenerated electrons/holes in an epitaxial graphene-on-Si heterostructure under pumping with a 1550-nm, 80-fs pulsed fiber laser beam and…
We investigate decoherence of an electron in graphene caused by electron-flexural phonon interaction. We find out that flexural phonons can produce dephasing rate comparable to the electron-electron one. The problem appears to be quite…
We calculate the linear transverse current current response function for graphene at finite temperature and chemical potential. Within the Random Phase Approximation, we then discuss general aspects of transverse plasmons beyond the local…
We show that the electron-phonon coupling in graphene, in contrast with the non-relativistic two-dimensional electron gas, leads to shifts in the phonon frequencies that are non-trivial functions of the electronic density. These shifts can…
Point Projection Microscopy (PPM) is used to image suspended graphene using low-energy electrons (100-200eV). Because of the low energies used, the graphene is neither damaged or contaminated by the electron beam. The transparency of…
We report on the temperature dependent electron transport in graphene at different carrier densities $n$. Employing an electrolytic gate, we demonstrate that $n$ can be adjusted up to 4$\times10^{14}$cm$^{-2}$ for both electrons and holes.…
This work reports information on the transience of hole doping in epitaxial graphene devices when nitric acid is used as an adsorbent. Under vacuum conditions, desorption processes are monitored by electrical and spectroscopic means to…
Electron and phonon transient temperatures are analyzed in the case of nondegenerate semiconductors. An analytical solution is obtained for rectangular laser pulse absorption. It is shown that thermal diffusion is the main energy relaxation…
The phonon-assisted interband optical absorption spectrum of silicon is calculated at the quasiparticle level entirely from first principles. We make use of the Wannier interpolation formalism to determine the quasiparticle energies, as…
In the recent years, the number of detected very high energy (VHE: E > 100 GeV) gamma-ray sources has increased rapidly. The sources have been observed at redshifts up to z = 0.536 without strong indications for the presence of absorption…
We present a joint theory-experiment study on ultrafast photoluminescence from photoexcited graphene. Based on a microscopic theory, we reveal two distinct mechanisms behind the occurring photoluminescence: Besides the well-known incoherent…