Related papers: Time- and spatially-resolved magnetization dynamic…
Spin-orbit torque (SOT) induced magnetisation switching in CoFeB/Ta/CoFeB trilayer with two CoFeB layers exhibiting in-plane magnetic anisotropy (IPMA) and perpendicular magnetic anisotropy (PMA) is investigated. Interlayer exchange…
Oxidation strongly influences the properties of magnetic layers employed in spintronic devices. We study the effect of oxidation on the structural, magnetic, and electrical properties as well as current-induced spin-orbit torques (SOTs) in…
Artificial modulation of a neuronal subset through ion channels activation can initiate firing patterns of an entire neural circuit in vivo. As nanovalves in the cell membrane, voltage-gated ion channels can be artificially controlled by…
A simple model of magnetization dynamics in a ferromagnet/doped semiconductor hybrid structure with Rashba spin-orbit interaction (SOI) driven by an applied pulse of the electric field is proposed. The electric current excited by the…
Using the linear response formalism for the spin-orbit torque (SOT) we compute from first principles the SOT in a system of two layers of L1$_0$-FePt(001) deposited on an fcc Pt(001) substrate of varying thickness. We find that at room…
We use time-resolved (TR) measurements based on the polar magneto-optical Kerr effect (MOKE) to study the magnetization dynamics excited by spin orbit torques in Py (Permalloy)/Pt and Ta/CoFeB bilayers. The analysis reveals that the…
The spin-orbit torque device is promising as a candidate for next generation magnetic memory, while the static in-plane field needed to induce deterministic switching is a main obstacle for its application in highly integrated circuits.…
Spin-orbit torque (SOT) created by a spin current injected into a ferromagnet by an adjacent heavy metal represents an efficient tool for the excitation and manipulation of spin waves. Here we report the micromagnetic simulations describing…
Heavy metals with strong spin-orbit coupling (SOC) have been employed to generate spin current to control the magnetization dynamics by spin-orbit torque (SOT). Magnetic tunnel junction based on SOT (SOT-MTJ) is a promising application with…
Many key electronic technologies (e.g., large-scale computing, machine learning, and superconducting electronics) require new memories that are fast, reliable, energy-efficient, and of low-impedance at the same time, which has remained a…
We model the electron and hole spin dynamics in an undoped double quantum dot structure, considering the carrier tunneling between quantum dots. Taking into account also the presence of an in-plane or tilted magnetic field, we provide the…
The writing process of SOT-MRAMs is considered deterministic when additional symmetry-breaking factors, such as the application of an external magnetic field aligned with the current, are present. Notably, the write probability exhibits a…
All-optical switching (AOS) of magnetic materials describes the reversal of the magnetization using short (femtosecond) laser pulses, and has been observed in a variety of materials. In the past decade it received extensive attention due to…
We report the possibility of achieving an order of magnitude reduction in the energy dissipation needed to write bits in perpendicular magnetic tunnel junctions (p-MTJs) by simulating the magnetization dynamics under a combination of…
We report single-shot measurements of resistance versus time for thermally assisted spin-torque-driven switching in magnetic tunnel junctions. We achieve sufficient sensitivity to resolve the resistance signals leading up to switching,…
We explore theoretically the spin transport in nanostructures consisting of a gold quantum dot bridging nonmagnetic electrodes and two Mn12-Ph single molecule magnets (SMMs) that are thiol-bonded to the dot but are not in direct contact…
All-optical ultrafast magnetization switching in magnetic material thin film without the assistance of an applied external magnetic field is being explored for future ultrafast and energy-efficient magnetic storage and memories. It has been…
We demonstrate ultra-fast (down to 400 ps) bipolar magnetization switching of a three-terminal perpendicular Ta/FeCoB/MgO/FeCoB magnetic tunnel junction. The critical current density rises significantly as the current pulse shortens below…
In this work we demonstrate a spin-orbit torque (SOT) magnetic field sensor, designed as a Ta/CoFeB/MgO structure, with high sensitivity and capable of active offset compensation in all three spatial directions. This is described and…
Antiferromagnets are outstanding candidates for the next generation of spintronic applications, with great potential for downscaling and decreasing power consumption. Recently, the manipulation of bulk properties of antiferromagnets has…