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Tunneling conductance between two bilayer graphene (BLG) sheets separated by 2 nm-thick insulating barrier was measured in two devices with the twist angles between BLGs less than 1{\deg}. At small bias voltages, the tunneling occurs with…

Large-area single-crystal monolayers of two-dimensional (2D) materials such as graphene and hexagonal boron nitride (h-BN) can be grown by chemical vapour deposition (CVD). However, the high temperatures and fast timescales at which the…

Twist-controlled moire superlattices (MS) have emerged as a versatile platform in which to realize artificial systems with complex electronic spectra. Bernal-stacked bilayer graphene (BLG) and hexagonal boron nitride (hBN) form an…

Modern nanoscience has focused on two-dimensional (2D) layer structure materials which have garnered tremendous attention due to their unique physical, chemical and electronic properties since the discovery of graphene in 2004. Recent…

Materials Science · Physics 2017-11-28 Srimanta Pakhira , Jose L. Mendoza-Cortes

High carrier mobilities play a fundamental role for high-frequency electronics, integrated optoelectronics as well as for sensor and spintronic applications, where device performance is directly linked to the magnitude of the carrier…

The development of valleytronics demands long-range electronic transport with preserved valley index, a degree of freedom similar to electron spin. A promising structure for this end is a topological one-dimensional (1D) channel formed in…

Mesoscale and Nanoscale Physics · Physics 2019-01-25 E. Mania , A. R. Cadore , T. Taniguchi , K. Watanabe , L. C. Campos

We present Coulomb-drag measurements on a heterostructure comprising two Bernal-stacked bilayer graphene (BLG) sheets separated by a 2.5 nm hexagonal boron nitride (hBN) spacer in the quantum Hall (QH) regime. Using top and bottom gate…

Mesoscale and Nanoscale Physics · Physics 2026-03-18 Zeyu Hao , A. M. Zimmerman , Kenji Watanabe , Takashi Taniguchi , Philip Kim

We investigate the transport properties of double-gated bilayer graphene nanoribbons at room temperature. The devices were fabricated using conventional CMOS-compatible processes. By analyzing the dependence of the resistance at the charge…

Mesoscale and Nanoscale Physics · Physics 2015-05-18 Bartholomaeus N. Szafranek , Daniel Schall , Martin Otto , Daniel Neumaier , Heinrich Kurz

Graphene has attracted significant interest both for exploring fundamental science and for a wide range of technological applications. Chemical vapor deposition (CVD) is currently the only working approach to grow graphene at wafer scale,…

The electronic properties of moir\'e heterostructures depend sensitively on the relative orientation between layers of the stack. For example, near-magic-angle twisted bilayer graphene (TBG) commonly shows superconductivity, yet a TBG…

We have achieved mobilities in excess of 200,000 cm^2/Vs at electron densities of ~2*10^11 cm^-2 by suspending single layer graphene. Suspension ~150 nm above a Si/SiO_2 gate electrode and electrical contacts to the graphene was achieved by…

Mesoscale and Nanoscale Physics · Physics 2009-11-13 K. I. Bolotin , K. J. Sikes , Z. Jiang , M. Klima , G. Fudenberg , J. Hone , P. Kim , H. L. Stormer

We produce multilayer graphene by the Chemical Vapor Deposition (CVD) method at atmospheric pressure and 1000 {\deg}C, using flexible copper substrates as catalyst and liquid hexane as the source of carbon. We designed an optical device to…

Mesoscale and Nanoscale Physics · Physics 2012-03-01 C. Bautista , D. Mendoza

Single layer graphene foils produced by Chemical Vapor Deposition (CVD) are rolled with self-positioned layers of InGaAs/Cr forming compact multi-turn tubular structures that consist on successive graphene/metal/semiconductor…

Materials Science · Physics 2015-06-19 Ingrid D. Barcelos , Luciano G. Moura , Rodrigo G. Lacerda , Angelo Malachias

The effect of an hexagonal boron nitride (hBN) layer close aligned with twisted bilayer graphene (TBG) is studied. At sufficiently low angles between twisted bilayer graphene and hBN, $\theta_{hBN} \lesssim 2^\circ$, the graphene electronic…

Strongly Correlated Electrons · Physics 2020-10-28 Tommaso Cea , Pierre A. Pantaleon , Francisco Guinea

Rhombohedral-stacked few-layer graphene (FLG) has been receiving an ever-increasing attention owing to its peculiar electronic properties that could lead to enticing phenomena such as superconductivity and magnetic ordering. Up to now,…

Recent intensive research on two-dimensional materials (2DMs) rekindle the interest in the intercalation of various atoms and molecules into layered compounds as a tool to manufacture 2DMs and tune their optoelectronic, magnetic and…

Mesoscale and Nanoscale Physics · Physics 2025-07-10 Arkady V. Krasheninnikov , Yung-Chang Lin , Kazu Suenaga

Vertical and lateral heterogeneous structures of two-dimensional (2D) materials have paved the way for pioneering studies on the physics and applications of 2D materials. A hybridized hexagonal boron nitride (h-BN) and graphene lateral…

We study the electronic transport properties of dual-gated bilayer graphene devices. We focus on the regime of low temperatures and high electric displacement fields, where we observe a clear exponential dependence of the resistance as a…

Mesoscale and Nanoscale Physics · Physics 2010-10-12 Thiti Taychatanapat , Pablo Jarillo-Herrero

A transformation of the band structure in bilayer graphene (BLG) with relatively shifted layers has been studied in the framework of the tight-binding model. BLG is demonstrated to remain a zero-gap material in the whole range of…

Mesoscale and Nanoscale Physics · Physics 2014-01-07 V. G. Litovchenko , A. I. Kurchak , M. V. Strikha

Temperature-dependent resistivity of graphene grown by chemical vapor deposition (CVD) is investigated. We observe in low mobility CVD graphene device a strong insulating behavior at low temperatures and a metallic behavior at high…

Mesoscale and Nanoscale Physics · Physics 2011-08-16 J. Heo , H. J. Chung , Sung-Hoon Lee , H. Yang , D. H. Seo , J. K. Shin , U-In Chung , S. Seo , E. H. Hwang , S. Das Sarma
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