Related papers: Hole weak anti-localization in a strained-Ge surfa…
We report on transport experiments through high-mobility gate-tunable undoped InSb QWs. Due to the elimination of any Si modulation doping, the gate-defined two-dimensional electron gases in the quantum wells display a significantly…
We have studied the magnetotransport properties of a high mobility two-dimensional hole gas (2DHG) system in a 10nm GaAs quantum well (QW) with densities in range of 0.7-1.6*10^10 cm^-2 on the metallic side of the zero-field…
Theory of weak localization is developed for two-dimensional holes in semiconductor heterostructures. Ballistic regime of weak localization where the backscattering occurs from few impurities is studied with account for anisotropic momentum…
We study the local equilibrium properties of two-dimensional electron gases at high magnetic fields in the presence of random smooth electrostatic disorder, Rashba spin-orbit coupling, and the Zeeman interaction. Using a systematic magnetic…
We present transport measurements performed in InAs/GaSb double quantum wells. At the electron-hole crossover tuned by a gate voltage, a strong increase in the longitudinal resistivity is observed with increasing perpendicular magnetic…
The influence of weak localization on Hanle effect in a two-dimensional system with spin-split spectrum is considered. We show that weak localization drastically changes the dependence of stationary spin polarization $\mathbf S$ on external…
Spin current of two-dimensional holes occupying the ground-state subband in an asymmetric quantum well and interacting with static disorder potential is calculated in the presence of a weak magnetic field H perpendicular to the well plane.…
The coupling between Zeeman spin splitting and Rashba spin-orbit terms has been studied experimentally in a gated InGaAs/InP quantum well structure by means of simultaneous measurements of the weak antilocalization (WAL) effect and beating…
Weak localization theory is developed for graphene heterostructures with transition metal dichalcogenides and topological insulators where the Rashba and valey-Zeeman spin-splittings of the energy spectrum are large enough. The anomalous…
We analyze the magnetoconductance of two-dimensional electron and hole gases (2DEGs) subject to a parallel magnetic field. It is shown that, for confining potential wells which are symmetric with respect to spatial inversion, a…
We report low-field magnetotransport data in two-dimensional hole systems in GaAs/AlGaAs heterostructures and quantum wells, in a large density range, $2.5 \times 10^{10} \leq p \leq 4.0 \times 10^{11}$ cm$^{-2}$, with primary focus on…
Two-dimensional hole gases in semiconductor quantum wells are promising platforms for spintronics and quantum computation but suffer from the lack of the $\bf{k}$-linear term in the Rashba spin-orbit coupling (SOC), which is essential for…
The results of experimental study of interference induced magnetoconductivity in narrow HgTe quantum wells of hole-type conductivity with a normal energy spectrum are presented. Interpretation of the data is performed with taking into…
We have measured the conductivity in a gated high-mobility GaAs two dimensional hole sample with densities in the range (7-17)x10^9 cm^-2 and at hole temperatures down to 5x10^-3 E_F. We measure the weak localization corrections to the…
Magnetoconductance of a gated two-dimensional electron gas (2DEG) in the inversion layer on p-type HgCdTe crystal is investigated. At strong magnetic fields, characteristic features such as quantum Hall effect of a 2DEG with single subband…
There currently is a large effort to explore spin-orbit effects in semiconductor structures with the ultimate goal of manipulating electron spins with gates. A search for materials with large spin-orbit coupling is therefore important. We…
The results of experimental study of the magnetoconductivity of 2D electron gas caused by suppression of the interference quantum correction in HgTe single quantum well heterostructure with the inverted energy spectrum are presented. It is…
We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in surface indium antimonide quantum wells. The topmost 5 nm of the 30 nm wide quantum well is doped and shown to promote the formation of…
A negative magnetoresistance under the in-plane magnetic field, reaching maximum 30-40% of its zero-field value in fields higher than ~12 T, has been found in wide Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum wells (QW) containing the…
We have measured the temperature (0.1 < T < 15 K) and magnetic field (0 < B < 32 T) dependences of longitudinal and Hall resistivities for the p-Ge_{1-x}Si_x/Ge, x=~0.07, multilayers with different Ge layer widths 10 < d_w < 38 nm and hole…