Magnetoconductance of a gated two-dimensional electron gas (2DEG) in the inversion layer on p-type HgCdTe crystal is investigated. At strong magnetic fields, characteristic features such as quantum Hall effect of a 2DEG with single subband occupation are observed. At weak magnetic fields, weak antilocalization effect in ballistic regime is observed. Phase coherence time and zero-field spin-splitting are extracted according to Golub's model. The temperature dependence of dephasing rate is consistent with Nyquist mechanism including both singlet and triplet channel interactions.
@article{arxiv.1012.0969,
title = {Weak antilocalization effect of high-mobility two-dimensional electron gas in inversion layer on p-type HgCdTe},
author = {Rui Yang and Guolin Yu and Kuanghong Gao and Laiming Wei and Xinzhi Liu and Tie Lin and Shaoling Guo and Ning Dai and Junhao Chu},
journal= {arXiv preprint arXiv:1012.0969},
year = {2015}
}