Related papers: On the impact ionization rate in direct gap semico…
Quantum embedding theories are promising approaches to investigate strongly-correlated electronic states of active regions of large-scale molecular or condensed systems. Notable examples are spin defects in semiconductors and insulators. We…
Gate-induced wave function manipulation of a single dopant atom is a possible basis of atomic scale electronics. From this perspective, we analyzed the effect of a small nearby gate on a single dopant atom in a semiconductor up to field…
Quantum Defect theory is a well established theoretical concept in modern spectroscopy. We show that this approach is useful in electron impact ionization problems where state of the art theoretical methods are presently restricted mostly…
Reliable and precise measurements of the relative energy of band edges in semiconductors are needed to determine band gaps and band offsets, as well as to establish the band diagram of devices and heterostructures. These measurements are…
We demonstrate by time-resolved resonance fluorescence measurements on a single self-assembled quantum dot an internal photo-effect that emits electrons from the dot by an intra-band excitation. We find a linear dependence of the optically…
We report on a stable form of pulsed electroluminescence in a dopant-free direct bandgap semiconductor heterostructure which we coin the tidal effect. Swapping an inducing gate voltage in an ambipolar field effect transistor allows incoming…
The local-density approximation (LDA), together with the half-occupation (transition state) is notoriously successful in the calculation of atomic ionization potentials. When it comes to extended systems, such as a semiconductor infinite…
We develop a theoretical proposal for the charge Kondo effect in mesoscopic normal-superconductor-normal heterostructures, where the superconducting gap exceeds the electrostatic charging energy. Charge-Kondo correlations in these devices…
Very high precision measurements of the electron Lande g-factor in GaAs are presented using spin-quantum beat spectroscopy at low excitation densities and temperatures ranging from 2.6 to 300 K. In colligation with available data for the…
We calculate the Coulomb interaction induced density, temperature and magnetization dependent many-body band-gap renormalization in a typical diluted magnetic semiconductor GaMnAs in the optimally-doped metallic regime as a function of…
A systematic study of the $R_e$-$T_m$ relation ($R_e$ = track radius, $T_m$ = melting temperature) in insulators reveals new features of track formation. A quantitative relationship is demonstrated between $R_e$ values measured in various…
In this article we have analytically deduced the frequency dependent expression of conductivity and the band gap energy in $AdS_{4}$ Schwarzschild background for p-wave holographic superconductors considering Einstein-Yang-Mills theory. We…
The two-orbital superconducting state is modeled by on-site intra-orbital negative-U Hubbard correlations together with inter-orbital pair-transfer interactions. The critical temperature is mainly governed by intra-orbital attractive…
Atomic effective pseudopotentials enable atomistic calculations at the level of accuracy of density functional theory for semiconductor nanostructures with up to fifty thousand atoms. Since they are directly derived from ab-initio…
In this study, we investigate the electronic, optical, thermoelectric, and thermodynamic properties of Ca(InP)2 through comprehensive theoretical calculations Ca(InP)2 is a compound with promising applications in materials science and…
We study the effect of semicore states on the self-energy corrections and electronic energy gaps of silicon, germanium and GaAs. Self-energy effects are computed within the GW approach, and electronic states are expanded in a plane-wave…
We report observations of superradiance for atoms trapped in the near field of a photonic crystal waveguide (PCW). By fabricating the PCW with a band edge near the D$_1$ transition of atomic cesium, strong interaction is achieved between…
It is a well known fact that non-trivial boundary conditions affect the interaction between atoms and the always present quantized electromagnetic field. In this paper, we focus on how the spontaneous emission rate of a given excited atom…
Irradiation damage is a key physics issue for semiconductor devices under extreme environments. For decades, the ionization-irradiation-induced damage in transistors with silica-silicon structures under constant dose rate is modeled by a…
Semiconductor quantum dots driven by the broadband radiation fields of nearby quantum point contacts provide an exciting new setting for probing dynamics in driven quantum systems at the nanoscale. We report on real-time charge-sensing…