Related papers: Delayed avalanches in Multi-Pixel Photon Counters
The crosstalk and afterpulsing in Hamamatsu silicon photomultipliers, called Multi-Pixel Photon Counters (MPPCs), have been studied in depth. Several components of the correlated noise have been identified according to their different…
We have performed a statistical characterization of the effect of afterpulsing in a free-running silicon single-photon detector by measuring the distribution of afterpulse waiting times in response to pulsed illumination and fitting it by a…
Single-photon detectors, like Avalanche Photo Diodes (APDs), have a great importance in many fields like quantum key distribution, laser ranging, florescence microscopy, etc. Afterpulsing is a typical non ideal behavior of APDs, operated in…
We investigated the reset time of superconducting nanowire avalanche photodetectors (SNAPs) based on 30 nm wide nanowires. We studied the dependence of the reset time of SNAPs on the device inductance and discovered that SNAPs can provide a…
Recent interest in pile-up mitigation through fast timing at the HL-LHC has focused attention on technologies that now achieve minimum ionising particle (MIP) time resolution of 30 picoseconds or less. The constraints of technical maturity…
The upgrades of ATLAS and CMS for the High Luminosity LHC (HL-LHC) highlighted physics objects timing as a tool to resolve primary interactions within a bunch crossing. Since the expected pile-up is around 200, with an r.m.s. time spread of…
Afterpulsing is one of the main technological flaws present in photon counting detectors based on solid-state semiconductor avalanche photodiodes operated in Geiger mode. Level of afterpulsing depends mainly on type of the semiconductor,…
Optical observations with high time resolution are essential for understanding the origin of sub-millisecond timescale astronomical phenomena, including giant radio pulses from the Crab Pulsar. We have developed a high-speed imaging system…
We present characterization results of two silicon photomultipliers; the Hamamatsu LVR-6050-CN and the Ketek PM3325 WB. With our measurements of the bias dependence of the breakdown probability we are able to draw conclusions about the…
We will describe the characteristics of the afterpulsing effect seen in the optical intensifiers. It can be caused by either secondary electrons produced by primary photoelectrons hitting the micro-channel plate surface or by electron…
The after-pulsing probability in Silicon Photomulti- pliers and its time constant are obtained measuring the mean number of photo-electrons in a variable time window following a light pulse. The method, experimentally simple and…
Novel generation of silicon-based photodetectors are attractive alternatives to the traditional phototubes. They offer significant advantages but they present new challenges too. Presence of afterpulses may affect many characteristics of…
PIXELATED geiger-mode avalanche photodiodes(PPDs), often called silicon photomultipliers (SiPMs) are emerging as an excellent replacement for traditional photomultiplier tubes (PMTs) in a variety of detectors, especially those for subatomic…
We have investigated the effects caused by proton-induced radiation damage on Multi-Pixel Photon Counter (MPPC), a pixelized photon detector developed by Hamamatsu Photonics. The leakage current of irradiated MPPC samples linearly increases…
Large-area next-generation physics experiments rely on using Silicon Photo-Multiplier (SiPM) devices to detect single photons, which trigger charge avalanches. The noise mechanism of external cross-talk occurs when secondary photons…
Results of radiation tests of Hamamatsu 2.0 x 2.0~mm2 through-silicon-via (S13360-2050VE) multi-pixel photon counters, or MPPCs [1], are presented. Distinct sets of eight MPPCs were exposed to four different 1~MeV neutron equivalent doses…
Silicon Photomultipliers (SiPMs) have been widely adopted for photon detection in next-generation dark matter and neutrino detection experiments. Internal crosstalk, resulting from secondary photons produced during charge avalanches, is a…
We report a 2 GHz operation of InGaAs avalanche photodiodes for efficient single photon detection at telecom wavelengths. Employing a self-differencing circuit that incorporates tuneability in both frequency and arm balancing, extremely…
InGaAs/InP-based semiconductor avalanche photodiode are usually employed for single-photon counting at telecom wavelength. However they are affected by afterpulsing which limits the diode performance. Recently, Princeton Lightwave has…
We characterize the temporal evolution of the afterpulse probability in a free-running negative feedback avalanche diode (NFAD) over an extended range, from $\sim$300 ns to $\sim$1 ms. This is possible thanks to an extremely low dark count…