Related papers: Poor electronic screening in lightly doped Mott in…
Realizing an excitonic insulator phase from narrow-gap semiconductors remains challenging, as unambiguous experimental signatures are difficult to establish. Ta$_2$NiSe$_5$ has been widely regarded as a leading candidate, yet the nature of…
Though most fermionic Mott insulators order at low temperatures, ordering is ancillary to their insulating behaviour. Our emphasis here is on disentangling ordering from the intrinsic strongly correlated physics of a doped half-filled band.…
We study the proximity effect between the fully-gapped region of a topological insulator in direct contact with an s-wave superconducting electrode (STI) and the surrounding topological insulator flake (TI) in…
The evolution of the electronic structures of strongly correlated insulators with doping has long been a central fundamental question in condensed matter physics; it is also of great practical relevance for applications. We have studied the…
A complicating factor in unraveling the theory of high-temperature (high-Tc) superconductivity is the presence of a "pseudogap" in the density of states, whose origin has been debated since its discovery [1]. Some believe the pseudogap is a…
We study the evolution of a Mott-Hubbard insulator into a correlated metal upon doping in the two-dimensional Hubbard model using the Cellular Dynamical Mean Field Theory. Short-range spin correlations create two additional bands apart from…
We investigate the evolution of the Mott insulators in the triangular lattice Hubbard Model, as a function of hole doping $\delta$ in both the strong and intermediate coupling limits. Using the advanced density matrix renormalization group…
We report numerical simulation result of a recently proposed \{P. Bruno, Phys. Rev. Lett {\bf 79}, 4593, (1997)\} approach to perform magnetic scanning tunneling microscopy with a two terminal non-magnetic tip. It is based upon the spin…
We analyze how a probing particle modifies the infrared electromagnetic near field of a sample. The particle, described by electric and magnetic polarizabilities, represents the tip of an apertureless scanning optical near-field microscope…
In a system with strong local repulsive interactions it should be more difficult to add an electron than to extract one. We make this idea precise by deriving various exact sum rules for the one-particle spectral function independent of the…
Momentum resolved inelastic resonant x-ray scattering is used to map the evolution of charge excitations over a large range of energies, momenta and doping levels in the electron doped Mott insulator class Nd$_{2-x}$Ce$_x$CuO$_4$. As the…
The insulator to metal transition in LaTiO_3 induced by La substitution via Sr is studied within multi-band exact diagonalization dynamical mean field theory at finite temperatures. It is shown that weak hole doping triggers a large…
A simple surface band structure and a large bulk band gap have allowed Bi2Se3 to become a reference material for the newly discovered three-dimensional topological insulators, which exhibit topologically-protected conducting surface states…
Many emergent phenomena appear in doped Mott insulators near the insulator-to-metal transition. In high-temperature cuprate superconductors, superconductivity arises when antiferromagnetic (AFM) order is gradually suppressed by carrier…
A central question in the high temperature cuprate superconductors is the fate of the parent Mott insulator upon charge doping. Here we use scanning tunneling microscopy to investigate the local electronic structure of lightly doped cuprate…
Despite the highly porous nature with significantly large surface area, metal organic frameworks (MOFs) can be hardly used in electronic, and optoelectronic devices due to their extremely poor electrical conductivity. Therefore, the study…
The lattice response of a prototype Mott insulator, SmTiO3, to hole doping is investigated with atomic-scale spatial resolution. SmTiO3 films are doped with Sr on the Sm site with concentrations that span the insulating and metallic sides…
Based on recent experiments, we describe the Mott insulating, but undimerized state of $TiOCl$ using the local-density approximation combined with multi-orbital dynamical mean field theory (LDA+DMFT) for this $3d^{1}$ system.Good agreement…
It is widely recognised that the effect of doping into a Mott insulator is complicated and unpredictable, as can be seen by examining the Hall coefficient in high $T_{\rm c}$ cuprates. The doping effect, including the electron-hole doping…
Controlling charged impurity disorder is a critical challenge for realizing the promise of topological insulator (TI) surfaces in devices. While doping is often used to tune the chemical potential, its impact on the fundamental disorder…