Related papers: High quality atomically thin PtSe2 films grown by …
Insulating substrates are crucial for electrical transport study and room temperature application of topological insulator films at thickness of only several nanometers. High quality quantum well films of Bi2Se3, a typical three-dimensional…
We report the structural and optical properties of molecular beam epitaxy (MBE) grown 2-dimensional (2D) material molybdenum diselenide (MoSe2) on graphite, CaF2 and epitaxial graphene. Extensive characterizations reveal that 2H- MoSe2…
We have investigated the growth by molecular-beam epitaxy of the II-VI diluted magnetic semiconductor (Zn,Mn)Se on As-passivated Si(100) substrates. The growth start has been optimized by using low-temperature epitaxy. Surface properties…
Epitaxial growth of WTe$_2$ offers significant advantages, including the production of high-qualityfilms, possible long range in-plane ordering and precise control over layer thicknesses. However,the mean island size of WTe$_2$ grown by…
The heteroepitaxial growth of Re (0001) films on Nb (110) surfaces has been investigated. Nb/Re bilayers were grown on A-plane sapphire -- alpha-Al2O3 (11-20) -- by molecular beam epitaxy. While Re grew with a (0001) surface, the in-plane…
Metal electrodes are a universal element of all electronic devices. Conducting SrRuO3 (SRO) epitaxial thin films have been extensively used as electrodes in complex-oxide heterostructures due to good lattice mismatches with perovskite…
Zinc-based nitride CaZn2N2 films grown by molecular beam epitaxy (MBE) with a plasma-assisted active nitrogen-radical source are promising candidates of next-generation semiconductors for light-emitting diodes and solar cells. This nitride…
We report on the growth of epitaxial Sr2RuO4 films using a hybrid molecular beam epitaxy approach in which a volatile precursor containing RuO4 is used to supply ruthenium and oxygen. The use of the precursor overcomes a number of issues…
MnGe has been grown as a thin film on Si(111) substrates by molecular beam epitaxy. A 10 \AA\ layer of MnSi was used as seedlayer in order to establish the B20 crystal structure. Films of a thickness between 45 and 135 \AA\ have been…
High quality thin films of topological insulators (TI) such as Bi2Se3 have been successfully synthesized by molecular beam epitaxy (MBE). Although the surface of MBE films can be protected by capping with inert materials such as amorphous…
Epitaxial thin films of 1T-HfTe2 semimetal are grown by MBE on AlN(0001) substrates. The measured in-plane lattice parameter indicates an unstrained film which is also azimuthally aligned with the AlN substrate, albeit with an in-plane…
We report comprehensive x-ray diffraction studies of the crystal structure and epitaxy of thin films of the topological insulator Bi2Te3 grown on Si (1 1 1). The films are single crystals of high crystalline quality, which strongly depends…
Materials with a layered Kagome lattice are expected to give rise to novel physics arising from band structures with topological properties, spin liquid behavior and the formation of skyrmions. Until now, most work on Kagome materials has…
Monolayer MoTe2 exhibits a variety of derivative structural phases and associated novel electronic properties that enable a wealth of potential applications in future electronic and optoelectronic devices. However, a comprehensive study…
Two-dimensional (2D) noble-metal dichalcogenides have emerged as a new platform for the realization of versatile flat optics with a considerable degree of miniaturization. However, light field manipulation at the atomic scale is widely…
We study the chemical ordering in Bi$_2$Te$_{3-x}$Se$_x$ grown by molecular beam epitaxy on Si substrates. We produce films in the full composition range from x = 0 to 3, and determine their material properties using energy dispersive X-ray…
In recent years, two-dimensional van der Waals materials have emerged as an important platform for the observation of long-range ferromagnetic order in atomically thin layers. Although heterostructures of such materials can be conceived to…
We present a newly developed facility, comprised of a combinatorial laser molecular beam epitaxy system and an in-situ scanning tunneling microscopy (STM). This facility aims at accelerating the materials research in a highly efficient way,…
Molecular beam epitaxy is one of the highest quality growth methods, capable of achieving theoretical material property limits and unprecedented device performance. However, such ultimate quality usually comes at the cost of painstaking…
Recent emergence of two-dimensional (2D) crystalline superconductors has provided a promising platform to investigate novel quantum physics and potential applications. To reveal essential quantum phenomena therein, ultralow temperature…