Related papers: Sub-Microsecond X-Ray Imaging Using Hole-Collectin…
Pixel Array Detectors (PADs) consist of an x-ray sensor layer bonded pixel-by-pixel to an underlying readout chip. This approach allows both the sensor and the custom pixel electronics to be tailored independently to best match the x-ray…
The charge collection properties in different particle sensor materials with respect to the shape of the generated signals, the electric field within the detector, the charge carrier mobility and the carrier lifetime are studied with the…
A Compton camera is the most promising approach for gamma-ray detection in the energy region from several hundred keV to MeV, especially for application in high energy astrophysics. In order to obtain good angular resolution, semiconductor…
This write-up explains the signal generation mechanism in CdTe semiconductor sensors. Derivations are mostly carried out explicitly, starting with basic semiconductor relations. The analysis is largely applicable to any semiconductor, with…
We propose a polarization-insensitive and high-efficiency plasmonic silicon Schottky diode for detection of sub-bandgap photons in the optical communication wavelength range through internal photoemission. Our photodiode is based on a…
We have been developing X-ray SOIPIXs for next-generation satellites for X-ray astronomy. Their high time resolution ($\sim10~\mu$s) and event-trigger-output function enable us to read out without pile-ups and to use anti-coincidence…
We report on an on-going test campaign of more than 5000 Schottky CdTe detectors (4x4x1 mm^3), over a sample of twelve thousands, provided by Acrorad Co., Ltd (Japan). 6400 of these detectors will be used to build the detection plane of the…
Dual-polarization heterodyne receivers operating at 325 GHz, 424 GHz, and 650 GHz at room temperature are presented. Polarimetric measurements are enabled by two orthogonal open-ended E-field probes, co-optimized and integrated with two…
Small collection-electrode monolithic CMOS sensors profit from a high signal-to-noise ratio and a small power consumption, but have a limited active sensor volume due to the fabrication process based on thin high-resistivity epitaxial…
We describe optical characterisation of a Strained Silicon Cold Electron Bolometer (CEB), operating on a $350~\mathrm{mK}$ stage, designed for absorption of millimetre-wave radiation. The silicon Cold Electron Bolometer utilises Schottky…
The deep trapping gate pixel device was described recently as an alternative to CMOS 3T pixel. The feasibilty of this device was studied with technological and transport simulations used in classical electron devices and process design. A…
Studies of a single photon counting hybrid pixel detector for X-ray imaging applications are presented. A silicon- and a CdTe-sensor were bump bonded onto the MPEC pixel readout chip and could be successfully operated. A new USB based…
Gamma-ray polarization offers a unique probes into the geometry of the gamma-ray emission process in celestial objects. The Soft Gamma-ray Detector (SGD) onboard the X-ray observatory Hitomi is a Si/CdTe Compton camera and is expected to be…
Purpose: Developing photon-counting CT detectors requires understanding the impact of parameters such as converter material, absorption length and pixel size. We apply a novel linear-systems framework, incorporating spatial and energy…
Polarimetry is an area of high energy astrophysics which is still relatively unexplored, even though it is recognized that this type of measurement could drastically increase our knowledge of the physics and geometry of high energy sources.…
Background rates in several pixel array detectors are investigated with an eye toward using them with hard, >6 keV, x-rays in very low-rate experiments - e.g. at signal rates <0.1/s/cm^2. Measured background event rates for a detector with…
Schottky photodetectors are attractive for CMOS-compatible photonic integrated circuits, but the trade-off between photon absorption and hot carrier emission often compromises the detection fidelity and sensitivity. Here, we report a…
Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric…
New generation Cadmium Telluride (CZT & CdTe) solid state detectors can provide high quantum efficiency with reasonably good energy resolution and can operate at near room temperature; an unique advantage for space experiments. We present…
Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) have been regarded as promising semiconductor materials for hard X-ray and Gamma-ray detection. The high atomic number of the materials (Z_{Cd} =48, Z_{Te} =52) gives a high…