Related papers: Voltage-induced suppression of weak localization i…
We present a magneto-transport study of graphene samples into which a mild disorder was introduced by exposure to ozone. Unlike the conductivity of pristine graphene, the conductivity of graphene samples exposed to ozone becomes very…
We develop a microscopic theory of the weak localization of two-dimensional massless Dirac fermions which is valid in the whole range of classically weak magnetic fields. The theory is applied to calculate magnetoresistance caused by the…
We compute the DC and the optical conductivity of graphene for finite values of the chemical potential by taking into account the effect of disorder, due to mid-gap states (unitary scatterers) and charged impurities, and the effect of both…
Gradual localization of charge carriers was studied in a series of micro-size samples of monolayer graphene fabricated on the common large scale film and irradiated by different doses of C$^+$ ions with energy 35 keV. Measurements of the…
We study the intervalley scattering in defected graphene by low-temperature transport measurements. The scattering rate is strongly suppressed when defects are charged. This finding highlights "screening" of the short-range part of a…
The influence of GaN nanowires on the optical and electrical properties of graphene deposited on them was studied using Raman spectroscopy and microwave induced electron transport method. It was found that interaction with the nanowires…
A gate induced insulating behavior at zero magnetic field is observed in a high mobility suspended monolayer graphene near the charge neutrality point. The graphene device initially cleaned by a current annealing technique was undergone a…
The role of defect-induced zero-energy modes on charge transport in graphene is investigated using Kubo and Landauer transport calculations. By tuning the density of random distributions of monovacancies either equally populating the two…
Graphene is a unique two-dimensional material with rich new physics and great promise for applications in electronic devices. Physical phenomena such as the half-integer quantum Hall effect and high carrier mobility are critically dependent…
The effect of weak potential and bond disorder on the density of states of graphene is studied. By comparing the self-consistent non-crossing approximation on the honeycomb lattice with perturbation theory on the Dirac fermions, we…
The electronic conductance of graphene-based bilayer flake systems reveal different quantum interference effects, such as Fabry-P\'erot resonances and sharp Fano antiresonances on account of competing electronic paths through the device.…
We demonstrated theoretically that the renormalization of the electron energy spectrum near the Dirac point of graphene by a strong high-frequency electromagnetic field (dressing field) drastically depends on polarization of the field.…
We study charge transport in one-dimensional graphene superlattices created by applying layered periodic and disordered potentials. It is shown that the transport and spectral properties of such structures are strongly anisotropic. In the…
Based on the quantum master equation approach, the nonlinear electric conductivity of graphene is investigated under static electric fields for various chemical potential shifts. The simulation results show that, as the field strength…
We describe charging a quantum dot induced electrostatically within a semiconducting graphene nanoribbon by electrons or holes. The applied model is based on a tight-binding approach with the electron-electron interaction introduced by a…
We consider quantum interference effects in carrier and photocurrent excitation in graphene using coherent electromagnetic field components at frequencies $\omega$ and $2\omega$. The response of the material at the fundamental frequency…
We employ a weak measurement approach to demonstrate the very existence of the photoexcited interband superposition states in intrinsic graphene. We propose an optical two-beam setup where such measurements are possible and derive an…
We report measurements of disordered graphene probed by both a high electric field and a high magnetic field. By apply a high source-drain voltage Vsd, we are able to study the current-voltage relation I-Vsd of our device. With increasing…
Graphene devices for analog and RF applications are prone to Low Frequency Noise (LFN) due to its upconversion to undesired phase noise at higher frequencies. Such applications demand the use of short channel graphene transistors that…
Theory of weak localization is developed for electrons in semiconductor quantum wells grown along [110] and [111] crystallographic axes. Anomalous conductivity correction caused by weak localization is calculated for symmetrically doped…