We report measurements of disordered graphene probed by both a high electric field and a high magnetic field. By apply a high source-drain voltage Vsd, we are able to study the current-voltage relation I-Vsd of our device. With increasing Vsd, a crossover from the linear I-Vsd regime to the non-linear one, and eventually to activationless-hopping transport occurs. In the activationless-hopping regime, the importance of Coulomb interactions between charged carriers is demonstrated. Moreover, we show that delocalization of carriers which are strongly localized at low T and at small Vsd occurs with the presence of high electric field and perpendicular magnetic field..
@article{arxiv.1310.6086,
title = {Non-Ohmic behavior of carrier transport in highly disordered graphene},
author = {Shun-Tsung Lo and Chiashain Chuang and R. K. Puddy and T. -M. Chen and C. G. Smith and C. -T. Liang},
journal= {arXiv preprint arXiv:1310.6086},
year = {2013}
}