Related papers: Drift-diffusion current in organic diodes
Charge and spin transport in spintronics devices can be described by a spin diffusion equation suitable for modelling scales much larger than the scattering and atomic scales. This work concerns the coarse graining procedure used to compute…
In this paper, we consider a drift-diffusion charge transport model for perovskite solar cells, where electrons and holes may diffuse linearly (Boltzmann approximation) or nonlinearly (e.g. due to Fermi-Dirac statistics). To incorporate…
In this work, we theoretically and numerically discuss the time fractional subdiffusion-normal transport equation, which depicts a crossover from sub-diffusion (as $t\rightarrow 0$) to normal diffusion (as $t\rightarrow \infty$). Firstly,…
In this paper, the Ni Schottky barrier on GaN epilayer grown on free standing substrates has been characterized. First, transmission electrical microscopy (TEM) images and nanoscale electrical analysis by conductive atomic force microscopy…
We present a theoretical investigation of the voltage-driven metal insulator transition based on solving coupled Boltzmann and Hartree-Fock equations to determine the insulating gap and the electron distribution in a model system -- a one…
We extend our previous work on the 2D Dimits transition in ion-scale turbulence (Ivanov et al. 2020) to include variations along the magnetic field. We consider a three-field fluid model for the perturbations of electrostatic potential, ion…
A systematic investigation of the electrical characteristics of \b{eta}-Ga2O3 Schottky barrier diodes (SBDs) has been conducted under high-dose 60Co gamma radiation, with total cumulative doses reaching up to 5 Mrad (Si). Initial exposure…
In ambient electromagnetic energy harvesting systems, the input power to the rectifier is low. To improve rectification efficiency, Schottky diodes, which are sensitive to low power, are commonly selected as rectifying devices to convert…
Using single-crystal transistors, we have performed a systematic experimental study of electronic transport through oxidized copper/rubrene interfaces as a function of temperature and bias. We find that the measurements can be reproduced…
The ambipolar diffusion approximation is used to model partially ionised plasma dynamics in a single fluid setting. To correctly apply the commonly used version of ambipolar diffusion, a set of criteria should be satisfied including the…
We apply the Poynting theorem to the scattering of monochromatic electromagnetic planes waves with normal incidence to the interface of two different media. We write this energy conservation theorem to introduce a natural definition of the…
This paper enhances the Diffuse Interface Method (DIM) for simulating compressible multiphase flows across all Mach numbers by addressing the accuracy challenges posed at low Mach regimes. A correction to the Riemann solver is introduced,…
A spin transport model is employed to study the effects of spin dephasing induced by diffusion-driven transit-time uncertainty through semiconductor spintronic devices where drift is the dominant transport mechanism. It is found that in the…
We theoretically study pump-photon-energy-dependent pathways of a photoinduced dimer-Mott-insulator-to-metal transition, on the basis of numerical solutions to the time-dependent Schr\"odinger equation for the exact many-body wave function…
We report a general macroscopic theory for the electrodynamic response of semi-infinite metals (SIMs). The theory includes the hitherto overlooked capacitive effects due to the finite spatial extension of a surface. The basic structure of…
We show that a semi-Dirac (SD) system with an inversion symmetry breaking mass exhibits a topological phase transition when irradiated with off-resonant light. Using Floquet theory, we derive the band structure, Chern numbers, phase…
The cold source field-effect transistor (CSFET) is promising for reducing power dissipation in integrated circuits by engineering the density of states at the injecting source. Existing CSFET designs utilizing Dirac-source metals or…
For the Internet of Things (IoT), there might be a large number of devices to be connected to the Internet through wireless technologies. In general, IoT devices would have various constraints due to limited processing capability, memory,…
The protected surface conduction of topological insulators is in high demand for the next generation of electronic devices. What is needed to move forward are robust settings where topological surface currents can be controlled by simple…
We derive generalized charge energy rate equations for organic solids and biomolecular aggregates, even when these are dynamically disordered. These equations suggest that the transport in such cases rely on both drift and diffusion…