Related papers: Gate-tunable strong-weak localization transition i…
At low energy scales charge transport in the insulating Si:P is dominated by activated hopping between the localized donor electron states. Thus, theoretical models for a disordered system with electron-electron interaction are appropriate…
As a new two-dimensional layered material, black phosphorus (BP) is a promising material for nanoelectronics and nano-optoelectronics. We use Raman spectroscopy and first-principles theory to report our findings related to low-frequency…
The intrinsic carrier transport dynamics in phosphorene is theoretically examined. Utilizing a density functional theory treatment, the low-field mobility and the saturation velocity are characterized for both electrons and holes in the…
Phase change materials (PCMs) are well-known for their reversible and rapid switching between crystalline and amorphous phases through thermal excitations mediated by strong electrical or laser pulses. This crystal-to-amorphous transition…
Unencapsulated, exfoliated black phosphorus (BP) flakes are found to chemically degrade upon exposure to ambient conditions. Atomic force microscopy, electrostatic force microscopy, transmission electron microscopy, X-ray photoelectron…
Black phosphorus (bP) is the second known elemental allotrope with a layered crystal structure that can be mechanically exfoliated down to atomic layer thickness. We have fabricated bP naked quantum wells in a back-gated field effect…
Energy bandgap largely determines the optical and electronic properties of a semiconductor. Variable bandgap therefore makes versatile functionality possible in a single material. In layered material black phosphorus, the bandgap can be…
We investigate the magnetotransport properties of a thin graphite wire resting on a silicon oxide substrate. The electric field effect is demonstrated with back and side gate electrodes. We study the conductance fluctuations as a function…
We probe the magnetotransport properties of individual InAs nanowires in a field effect transistor geometry. In the low magnetic field regime we observe magnetoresistance that is well described by the weak localization (WL) description in…
By means of a multi-scale first-principles approach, a description of the local electronic structure of two-dimensional and narrow phosphorene sheets with various types of modifications is presented. First, a rational argument based on the…
We have investigated the gate-voltage dependence and the temperature dependence of the magnetoconductivity of amorphous indium-gallium-zinc-oxide thin-film transistors. A weak-localization feature is observed at small magnetic fields on top…
We investigate transport in phosphorus-doped buried-channel metal-oxide-semiconductor field-effect transistors at temperatures between 10 and 295 K. In a range of doping concentration between around 2.1 and 8.7 x 1017 cm-3, we find that a…
We study hard-core bosons on the honeycomb lattice subjected to anisotropic nearest-neighbor hopping along with anisotropic nearest-neighbor repulsion, using a quantum Monte Carlo technique. At half-filling, we find a transition from strong…
We report measurements of magnetoresistance in bilayer graphene as a function of gate voltage (carrier density) and temperature. We examine multiple contributions to the magnetoresistance, including those of weak localization (WL),…
The charge carrier localization length {\alpha} is a crucial, yet often ignored parameter of conjugated polymers that exponentially influences electronic conductivity. Here, we argue it is a unique proxy of the energy landscape as…
Thermal conductivity of single layer black phosphorus (BP) is investigated by combining density functional calculations and Peierls-Boltzmann transport equation. Differing from isotropic and divergent thermal conductivities in…
Inspired by Holstein's work on small polaron hopping, the evolution equations of localized states and extended states in presence of atomic vibrations are derived for an amorphous semiconductor. The transition probabilities are obtained for…
This study addresses high electric field transport in multilayer black phosphorus (BP) field effect transistors (FETs) with self-heating and thermal spreading by dielectric engineering. Interestingly, we found that multilayer BP device on a…
Transient currents in atomically thin MoTe$_2$ field-effect transistor are measured during cycles of pulses through the gate electrode. The transients are analyzed in light of a newly proposed model for charge trapping dynamics that renders…
The electronic transport in few-layer black phosphorus (FLBP) nanoribbons is studied theoretically. The system is modeled on the basis of band-structures, which have been measured recently by $\mu$-ARPES experiments. We show that the…