Related papers: Effect of structural disorder on quantum oscillati…
We report the magnetoresistance, Hall effect, de Haas-van Alphen (dHvA) oscillations and the electronic structures of single crystal RhSn, which is a typical material of CoSi family holding a large Chern number. The large unsaturated…
We simulate a hybrid superconductor-graphene device in the quantum Hall regime to identify the origin of downstream resistance oscillations in a recent experiment [Zhao et. al. Nature Physics 16, (2020)]. In addition to the previously…
The ac susceptibility and de Haas-van Alphen (dHvA) effect in UGe$_2$ are measured at pressures {\it P} up to 17.7 kbar for the magnetic field {\it B} parallel to the {\it a} axis, which is the easy axis of magnetization. Two anomalies are…
We have measured de Haas-van Alphen oscillations of Cr$_{1-x}$V$_x$, $0 \le x \le 0.05$, at high fields for samples on both sides of the quantum critical point at $x_c=0.035$. For all samples we observe only those oscillations associated…
The Weyl semimetal NbP exhibits a very small Fermi surface consisting of two electron and two hole pockets, whose fourfold degeneracy in $k$ space is tied to the rotational symmetry of the underlying tetragonal crystal lattice. By applying…
I report a theoretical study of collective coherent quantum-mechanical oscillations in disordered superconducting quantum metamaterials (SQMs), i.e artificially fabricated arrays of interacting qubits (two-levels system). An unavoidable…
The effect of pressure on the structural and vibrational properties of the layered molecular crystal 1,1-diamino-2,2-dinitroethelene (FOX-7) are explored by first principles calculations. We observe significant changes in the calculated…
Shubnikov-de Haas (SdH) oscillations in metallic Bi2Se2.1Te0.9 are studied in magnetic fields up to 35 Tesla. It is demonstrated that two characteristic frequencies determine the quantum oscillations of the conductivity. Angle dependent…
We analyze the effect of disorder and notches on crack roughness in two dimensions. Our simulation results based on large system sizes and extensive statistical sampling indicate that the crack surface exhibits a universal local roughness…
Supplementary Information Content: 1. Sample preparation; 2. Background subtraction of Shubnikov-de Haas (SdH) oscillations; 3. The effect of density inhomogeneity on the quantum scattering time tau_q; 4. Determine the concentration of…
We theoretically investigate the effects of long-range disorder and electron-electron interactions on the optical properties of hexagonal armchair graphene quantum dots consisting of up to 10806 atoms. The numerical calculations are…
Mechanically exfoliated graphene layers deposited on SiO2 substrate were irradiated with Ar+ ions in order to experimentally study the effect of atomic scale defects and disorder on the low-energy electronic structure of graphene. The…
The Hamiltonian Theory of the fractional quantum Hall (FQH) regime provides a simple and tractable approach to calculating gaps, polarizations, and many other physical quantities. In this paper we include disorder in our treatment, and show…
The magnetization of heavy holes in III-V semiconductor quantum wells with Rashba spin-orbit coupling (SOC) in an external perpendicular magnetic field is theoretically studied. We concentrate on the effects on the magnetization induced by…
We have systematically investigated the effect of oxidation on the structural and electronic properties of graphene based on first-principles calculations. Energetically favorable atomic configurations and building blocks are identified,…
There is mounting theoretical evidence that black hole horizons induce decoherence on a quantum system, say a particle, put in a superposition of locations, with the decoherence functional, evaluated after closure of the superposition,…
Conductance fluctuation is usually unavoidable in graphene nanoribbons (GNR) due to the presence of disorder along its edges. By measuring the low-frequency noise in GNR devices, we find that the conductance fluctuation is strongly…
We calculate the ground-state energy of Dirac electrons in graphene in the presence of disorder. We take randomly distributed charged impurities at a fixed distance from the graphene sheet and surface fluctuations (ripples) as the main…
When a graphene layer is stressed, the strain alters the phase an electron accumulates hopping between sites in a way that can be modeled as arising from a pseudo-magnetic vector potential. We examine the case of an oscillating graphene…
We have used the de Hass-van Alphen (dHvA) effect to investigate the Fermi surface of high-quality crystalline TiSb2, which unveiled a nontrivial topologic nature by analyzing the dHvA quantum oscillations. Moreover, our analysis on the…