Related papers: Lateral ferromagnetic domain control in Cr2O3/Pt/C…
Perpendicular exchange bias has been manipulated by changing ferromagnetic film thickness and spacer layer in Pt/Co/(Pt, Cr)/CoO thin films. The exchange bias characteristics, blocking temperature, magnetization of thin films strongly…
Exchange bias is a horizontal shift of the hysteresis loop observed for a ferromagnetic layer in contact with an antiferromagnetic layer. Since exchange bias is related to the spin structure of the antiferromagnet, for its fundamental…
We investigate the motion of magnetic domain walls driven by magnetic fields and current-driven spin-orbit torques in an exchange-biased system with perpendicular magnetization. We consider Cr2O3/Co/Pt trilayers as model system, in which…
We investigated domain kinetics by measuring the polarization switching behaviors of polycrystalline Pb(Zr,Ti)O$_{3}$ films, which are widely used in ferroelectric memory devices. Their switching behaviors at various electric fields and…
Perpendicular exchange bias (EB), which combines the perpendicular magnetic anisotropy and the ferromagnetic (FM) - antiferromagnetic (AFM) exchange coupling, is extremely important in the high-density AFM spintronics. However, the…
We present a micromagnetic approach to exchange bias (EB) in ferromagnetic (FM)/antiferromagnetic (AFM) thin film systems with a small number of irreversible interfacial magnetic moments. We express the exchange bias field $H_{EB}$ in terms…
A study of dynamic and reversible voltage controlled magnetization switching in ferromagnetic Co/Pt thin film with perpendicular magnetic anisotropy at room temperature is presented. The change in the magnetic properties of the system is…
With the recent experimental verification that ferroelectric lattice distortions survive in the metallic phase of some materials, there is a desire to create devices that are both switchable and take advantage of the novel functionalities…
We demonstrated an electric field controlled exchange bias (EB) effect accompanied with unipolar resistive switching behavior in the Si/SiO2/Pt/Co/NiO/Pt device. By applying certain voltages, the device displays obvious EB in…
Models of exchange-bias in thin films have been able to describe various aspects of this technologically relevant effect. Through appropriate choices of free parameters the modelled hysteresis loops adequately match experiment, and typical…
We have carried out detailed experimental studies of the exchange bias effect of a series of CoO/Co(111) textured bilayers with different Co layer thickness, using the magneto-optical Kerr effect, SQUID magnetometry, polarized neutron…
A new characteristic is observed in the training effect of perpendicular exchange bias. For Pt/Co/Pt/IrMn multilayers with perpendicular magnetic anisotropy, the magnetization reversal process is accompanied by pinned domain wall motion and…
Monte Carlo simulations of a system consisting of a ferromagnetic layer exchange coupled to a diluted antiferromagnetic layer described by a classical spin model show a strong dependence of the exchange bias on the degree of dilution in…
Independently exchange biased subsystems can coexist in FeF2/Ni bilayers after various field-cooling protocols. We find double hysteresis loops for intermediate cooling fields, while for small or large cooling fields a negatively or…
Transport measurements are presented on thin-film superconducting spin-valve systems, where the controlled non-collinear arrangement of two ferromagnetic Co layers can be used to influence the superconducting state of Nb. We observe a very…
The exchange bias (EB) phenomenon has been found in Nd2/3Ca1/3MnO3 perovskite. The phenomenon manifests itself as a negative horizontal shift of magnetization hysteresis loops. The EB phenomenon is evident of an interface exchange coupling…
The magnetic exchange bias between epitaxial thin films of the multiferroic (antiferromagnetic and ferroelectric) hexagonal YMnO3 oxide and a soft ferromagnetic (FM) layer is used to couple the magnetic response of the ferromagnetic layer…
Epitaxial La0.67Sr0.33MnO3 (LSMO)/ SrRuO3 (SRO) ferromagnetic bilayers have been grown on (001) SrTiO3 (STO) substrates by pulsed laser deposition with atomic layer control. We observe a shift in the magnetic hysteresis loop of the LSMO…
The electric manipulation of antiferromagnets has become an area of great interest recently for zero-stray-field spintronic devices, and for their rich spin dynamics. Generally, the application of antiferromagnetic media for information…
The exchange bias (EB) effect, pivotal in magnetic data storage and sensing devices, has been observed not only in interfacial regions but also in intrinsic ferromagnetic materials. Here, we've uncovered a robust and stable exchange bias…