Related papers: First-principles-based method for electron localiz…
A conducting 1D chain or 2D film inside (or on the surface of) an insulator is considered. Impurities displace the charges inside the insulator. This results in a long-range fluctuating electric field acting on the conducting line (plane).…
Spin defects in solids offer promising platforms for quantum sensing and memory due to their long coherence times and optical addressability. Here, we integrate a single nitrogen-vacancy (NV) center in diamond with scanning probe microscopy…
We have developed an approach allowing us to resolve the problem of non-conventional Anderson localization emerging in bilayered periodic-on-average structures with alternating layers of right-handed and left-handed materials. Recently, it…
In this study we investigate the effect of random point disorder on the surface states of a topological insulator with out-of-plane magnetization. We consider the disorder within a high order Born approximation. The Born series converges to…
The interplay of interactions and disorder is studied using the Anderson-Hubbard model within the typical medium dynamical cluster approximation. Treating the interacting, non-local cluster self-energy ($\Sigma_c[{\cal \tilde{G}}](i,j\neq…
We study silicene on hexagonal boron nitride, using first principles calculations. Since hexagonal boron nitride is semiconducting, the interaction with silicene is weaker than for metallic substrates. It therefore is possible to open a 50…
We consider the problem of electron transport along a one-dimensional disordered multiple-scattering conductor, and study the electron density for all the electronic levels. A model is proposed for the reduced density matrix of the system…
We discuss orientational ordering in monolayers of solid hydrogen in view of recent experimental findings in NMR studies of (\QTR{it}{ortho)}$_{c}$-(\QTR{it}{para)}$_{1-c}$-hydrogen mixtures on boron nitride substrate. Analysis of the…
Integration of electrical contacts into van der Waals (vdW) heterostructures is critical for realizing electronic and optoelectronic functionalities. However, to date no scalable methodology for gaining electrical access to buried monolayer…
Hexagonal boron nitride (h-BN) is the only known material aside from graphite with a structure composed of simple, stable, non-corrugated atomically thin layers. While historically used as lubricant in powder form, h-BN layers have become…
An insulator differs from a metal because of a different organization of the electrons in their ground state. In recent years this feature has been probed by means of a geometrical property: the quantum metric tensor, which addresses the…
We report a numerical analysis of Anderson localization in a model of a doped semiconductor. The model incorporates the disorder arising from the random spatial distribution of the donor impurities and takes account of the electron-electron…
We study many-body localization in a hardcore boson model in the presence of random disorder on finite generation fractal lattices with different Hausdorff dimensions and different local lattice structures. In particular, we consider the…
Hexagonal boron nitride (h-BN) is well-established as a requisite support, encapsulant and barrier for 2D material technologies, but also recently as an active material for applications ranging from hyperbolic metasurfaces to room…
The nanosized boron vacancy ($V_\mathrm{B}^-$) defect spot in hexagonal boron nitride ($h$-BN) is promising for a local magnetic field quantum sensor. One of its advantages is that a helium-ion microscope can make a spot at any location in…
With the example of hexagonal boron nitride, we demonstrate how the character of electron-hole (e-h) pairs in van der Waals bound low-dimensional systems is driven by layer stacking. Four types of excitons appear, with either a two- or…
We study the localization property of a two-dimensional noninteracting electron gas in the presence of randomly distributed short-range scatterers. We evaluate the participation number of the eigenstates obtained by exact diagonalization…
We observe the emergence of a disorder-induced insulating state in a strongly interacting atomic Fermi gas trapped in an optical lattice. This closed quantum system free of a thermal reservoir realizes the disordered Fermi-Hubbard model,…
A new interlayer force-field for layered hexagonal boron nitride (h-BN) based structures is presented. The force-field contains three terms representing the interlayer attraction due to dispersive interactions, repulsion due to anisotropic…
Insulating hexagonal boron nitride (hBN) films with precisely controlled thickness are ideal dielectric components to modulate various interfaces in electronic devices. To achieve this, high-quality hBN with controlled atomic configurations…