Related papers: Image sensor array based on graphene-CMOS integrat…

High Energy Particle Physics experiments at the LHC use hybrid silicon detectors, in both pixel and strip geometry, for their inner trackers. These detectors have proven to be very reliable and performant. Nevertheless, there is great…

The CERN-RD50 CMOS working group develops the RD50-MPWseries of monolithic high-voltage CMOS pixel sensors for potential use in future high luminosity experiments such as the HL-LHC and FCC-hh. In this contribution, the design of the latest…

The integrated optical circuit is a promising architecture for the realization of complex quantum optical states and information networks. One element that is required for many of these applications is a high-efficiency photon detector…

Silicon photonics enables on-chip ultra-high bandwidth optical communications networks which is critical for the future of microelectronics1,2. By encoding information on-chip using multiple wavelength channels through the process of…

Graphene's linear bandstructure and two-dimensional density of states provide an implicit advantage for sensing charge. Here, these advantages are leveraged in a deeply depleted graphene-oxide-semiconductor (D2GOS) junction detector…

The goal of the TANGERINE project is to develop the next generation of monolithic silicon pixel detectors using a 65 nm CMOS imaging process, which offers a higher logic density and overall lower power consumption compared to previously…

This work presents a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150\,nm CMOS process. DMAPS exploit high voltage and/or high resistivity inclusion of modern CMOS technologies to achieve…

Graphene/silicon (G/Si) heterojunction based devices have been demonstrated as high responsivity photodetectors that are potentially compatible with semiconductor technology. Such G/Si Schottky junction diodes are typically in parallel with…

We present a monolithic, microfabricated, metal-oxide semiconductor (MOS) sensor array in conjunction with a machine learning algorithm to determine unique fingerprints of individual gases within homogenous mixtures. The array comprises…

Integrated and fiber-packaged magnetic field sensors with a sensitivity sufficient to sense electric pulses propagating along nerves in life science applications and with a spatial resolution fine enough to resolve their propagation…

CMOS pixel sensors with a small collection electrode combine the advantages of a small sensor capacitance with the advantages of a fully monolithic design. The small sensor capacitance results in a large ratio of signal-to-noise and a low…

We investigate advanced CMOS-compatible Graphene/Silicon active metasurfaces based on guided-mode resonance filters. The simulated results show a high extinction ratio (>25 dB), narrow linewidth (~1.5 nm @1550 nm), quality factor of Q~1000,…

The RGB complementary metal-oxidesemiconductor (CMOS) sensor works within the visible light spectrum. Therefore it is very sensitive to environmental light conditions. On the contrary, a long-wave infrared (LWIR) sensor operating in 8-14…

The development of CMOS pixel sensors with column parallel read-out and integrated zero-suppression has resulted in a full size, nearly 1 Megapixel, prototype with ~100 \mu s read-out time. Its performances are quite close to the ILD vertex…

Coherent multi-transducer ultrasound (CoMTUS) creates an extended effective aperture through the coherent combination of multiple arrays, which results in images with enhanced resolution, extended field-of-view, and higher sensitivity. The…

Silicon photonics is a powerful platform for implementing large-scale photonic integrated circuits (PICs), because of its compatibility with mature complementary-metal-oxide-semiconductor (CMOS) technology. Exploiting silicon-based PICs for…

With its electrically tunable light absorption and ultrafast photoresponse, graphene is a promising candidate for high-speed chip-integrated photonics. The generation mechanisms of photosignals in graphene photodetectors have been studied…

Integrated optical devices able to control light matter interactions on the nanoscale have attracted the attention of the scientific community in recent years. However, most of these devices are based on silicon waveguides, limiting their…

In this paper we present a novel, quadruple well process developed in a modern 0.18mu CMOS technology called INMAPS. On top of the standard process, we have added a deep P implant that can be used to form a deep P-well and provide screening…

The unique optical and electronic properties of graphene allow one to realize active optical devices. While several types of graphene-based photonic modulators have already been demonstrated, the potential of combining the versatility of…