Related papers: Image sensor array based on graphene-CMOS integrat…

A fast silicon-graphene hybrid plasmonic waveguide photodetectors beyond 1.55 {\mu}m is proposed and realized by introducing an ultra-thin wide silicon-on-insulator ridge core region with a narrow metal cap. With this novel design, the…

We report on the integration of large area CVD grown single- and bilayer graphene transparent conductive electrodes (TCEs) on amorphous silicon multispectral photodetectors. The broadband transmission of graphene results in 440% enhancement…

Increase in image resolution require the ability of image sensors to pack an increased number of circuit components in a given area. On the the other hand a high speed processing of signals from the sensors require the ability of pixel to…

With the increasing need for large volumes of data processing, transport, and storage, optimizing the trade-off between high-speed and energy consumption in today's optoelectronic devices is getting increasingly difficult. Heterogeneous…

We demonstrate superconducting single-photon detectors that integrate signals locally at each pixel. This capability is realized by the monolithic integration of superconducting-nanowire single-photon detectors with Josephson electronics.…

The concept of alloy engineering has emerged as a viable technique towards tuning the bandgap as well as engineering the defect levels in two-dimensional transition metal dichalcognides (TMDC). Possibility to synthesize these ultrathin TMDC…

Quantum photonic integrated circuit (QPIC) is a promising tool for constructing integrated devices for quantum technology applications. In the optical regime, silicon photonics empowered by complementary-metal-oxide-semiconductor (CMOS)…

Optoelectronic devices based on graphene and other two-dimensional (2D) materials, such as transition metal dichalcogenides (TMDs) are the focus of wide research interest. The characterization these emerging atomically thin materials and…

To fully utilize graphene's remarkable optical properties for optoelectronic applications, it needs to be integrated in planar photonic systems. Here, we demonstrate integration of graphene on silicon photonic circuits and precise…

The development of compact and fieldable mid-infrared (mid-IR) spectroscopy devices represents a critical challenge for distributed sensing with applications from gas leak detection to environmental monitoring. Recent work has focused on…

Monolithic active pixel sensors (MAPS) produced in a 65 nm CMOS imaging technology are being investigated for applications in particle physics. The MAPS design has a small collection electrode characterized by an input capacitance of ~fF,…

This paper presents the design and test results of a prototype monolithic pixel sensor manufactured in deep-submicron fully-depleted Silicon-On-Insulator (SOI) CMOS technology. In the SOI technology, a thin layer of integrated electronics…

A new generation of Monolithic Active Pixel Sensors (MAPS), produced in a 65 nm CMOS imaging process, promises higher densities of on-chip circuits and, for a given pixel size, more sophisticated in-pixel logic compared to larger feature…

Since its discovery in 2004, graphene has attracted the interest of the scientific community due to its excellent properties of high carrier mobility, flexibility, strong light-matter interaction and broadband absorption. Despite of its…

Since its first isolation in 2004, graphene has been found to host a plethora of unusual electronic transport phenomena, making it a fascinating system for fundamental studies in condensed-matter physics as well as offering tremendous…

The reliability of analysis is becoming increasingly important as point-of-care diagnostics are transitioning from single analyte detection towards multiplexed multianalyte detection. Multianalyte detection benefits greatly from…

Hybrid devices based on spin-crossover (SCO)/2D heterostructures grant a highly sensitive platform to detect the spin transition in the molecular SCO component and tune the properties of the 2D material. However, the fragility of the SCO…

Photonic quantum technologies promise to repeat the success of integrated nanophotonic circuits in non-classical applications. Using linear optical elements, quantum optical computations can be performed with integrated optical circuits and…

Monolithic Active Pixel Sensors (MAPS) combine the sensing part and the front-end electronics in the same silicon layer, making use of CMOS technology. Profiting from the progresses of this commercial process, MAPS have been undergoing…

Few-layer molybdenum disulfide (FL-MoS$_2$) films have been integrated into amorphous silicon (a-Si:H) pin photodetectors. To achieve this, vertical a-Si:H photodiodes were grown by plasma-enhanced chemical vapor deposition (PE-CVD) on top…