Related papers: Strained graphene Hall bar
The quantum Hall effects in the sliding bilayer graphene and AAB-stacked trilayer system are investigated by the Kubo formula and the generalized tight-binding model. The various stacking configurations can greatly diversify the magnetic…
We predict a novel class of magnetotransport oscillations in ballistic graphene specific for a ring-shape geometry. Using the B\"uttiker-Landauer formalism, we analytically obtain the local Hall and Nernst coefficients in the weak-field…
Recent studies have shown that moir\'{e} flat bands in a twisted bilayer graphene(TBG) can acquire nontrivial Berry curvatures when aligned with hexagonal boron nitride substrate [1, 2], which can be manifested as a correlated Chern…
Interactions of magnetic elements with graphene may lead to various electronic states that have potential applications. We report an in-situ experiment in which the quantum transport properties of graphene are measured with increasing…
The present paper corresponds to the third work of the author related to the magnetotransport properties concerning on the graphene systems. In the first one the integer quantum Hall effect in the monolayer graphene, (MG), MGIQHE, was…
The interaction between a graphene layer and a hexagonal Boron Nitride (hBN) substrate induces lateral displacements and strains in the graphene layer. The displacements lead to the appearance of commensurate regions and the existence of an…
We have studied the effect of an in-plane magnetic field on Hall field-induced resistance oscillations in high mobility two-dimensional electron systems. We have found that the oscillation frequency depends only on the perpendicular…
We report the observation of a quantum anomalous Hall effect in twisted bilayer graphene showing Hall resistance quantized to within .1\% of the von Klitzing constant $h/e^2$ at zero magnetic field.The effect is driven by intrinsic strong…
We report on theoretical and experimental investigations of the integer quantized Hall effect in narrow channels at various mobilities. The Hall bars are defined electrostatically in two-dimensional electron systems by biasing metal gates…
The Landau level spectra and the quantum Hall effect of ABA-stacked multilayer graphenes are studied in the effective mass approximation. The low-energy effective mass Hamiltonian may be partially diagonalized into an approximate…
We study the influence of the quantum geometry on the magnetic responses of quadratic band crossing semimetals. More explicitly, we examine the Landau levels, quantum Hall effect, and magnetic susceptibility of a general two-band…
Coulomb interaction between two closely spaced parallel layers of electron system can generate the frictional drag effect by interlayer Coulomb scattering. Employing graphene double layers separated by few layer hexagonal boron nitride…
The longitudinal current in a three-dimensional conductor is accompanied by transverse magnetic field in a specimen bulk. The absence of the transverse current in a sample bulk requires a nonzero Hall electric field in transverse…
We theoretically predict that the motion of a polar crystalline layer between two graphene planes exerts Coulomb drag on electrons in graphene, inducing a DC drag current. The physical mechanism underlying this drag arises from intervalley…
We report on the emergence of bulk, valley-polarized currents in graphene-based devices, driven by spatially varying regions of broken sublattice symmetry, and revealed by non-local resistance ($R_\mathrm{NL}$) fingerprints. By using a…
We report on the formation of critical states in disordered graphene, at the origin of variable and unconventional transport properties in the quantum Hall regime, such as a zero-energy Hall conductance plateau in the absence of an energy…
Recent magnetotransport studies on uniaxial ferromagnets have reported a cusplike feature in Hall resistivity when the magnetic field is tilted away from the conventional orthogonal direction of the Hall measurement. This feature has often…
We investigate the transport properties of quantum dots placed in strong magnetic field using a quantum-mechanical ' approach based on the 2D tight-binding Hamiltonian with direct Coulomb interaction and the Landauer-B\"{u}ttiker (LB)…
Straining graphene results in the appearance of a pseudo-magnetic field which alters its local electronic properties. Applying a pressure difference between the two sides of the membrane causes it to bend/bulge resulting in a resistance…
We investigate electronic transport in high mobility (\textgreater 100,000 cm$^2$/V$\cdot$s) trilayer graphene devices on hexagonal boron nitride, which enables the observation of Shubnikov-de Haas oscillations and an unconventional quantum…