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Related papers: Electrons and polarons at oxide interfaces explore…

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Novel electronic systems forming at oxide interfaces comprise a class of new materials with a wide array of potential applications. A high mobility electron system forms at the LaAlO$_3$/SrTiO$_3$ interface and, strikingly, both…

Mesoscale and Nanoscale Physics · Physics 2015-05-13 Lu Li , C. Richter , S. Paetel , T. Kopp , J. Mannhart , R. C. Ashoori

Transition metal oxides (TMOs) exhibit a broad spectrum of electronic, magnetic, and optical properties, making them intriguing materials for various technological applications. Soft x-ray absorption spectroscopy (XAS) is widely used to…

Electronic, lattice, and spin interactions at the interfaces between crystalline complex transition metal oxides can give rise to a wide range of functional electronic and magnetic phenomena not found in bulk. At hetero-interfaces, these…

Strongly Correlated Electrons · Physics 2017-08-03 S. Koohfar , A. S. Disa , M. Marshall , F. J. Walker , C. H. Ahn , D. P. Kumah

Coupling between spin, orbital, charge, and lattice degrees of freedom in transition-metal oxides produces a variety of electronic and magnetic phenomena of importance for future technologies. Here, we explore the electronic band structure…

In this study, we systematically investigate 3D momentum($\hbar k$)-resolved electronic structures of Ruddlesden-Popper-type iridium oxides Sr$_{n+1}$Ir$_n$O$_{3n+1}$ using soft-x-ray (SX) angle-resolved photoemission spectroscopy (ARPES).…

Using a low-temperature conductive-tip atomic force microscope in cross-section geometry we have characterized the local transport properties of the metallic electron gas that forms at the interface between LaAlO3 and SrTiO3. At low…

Using interlayer interaction to control functional heterostructures with atomic-scale designs has become one of the most effective interface-engineering strategies nowadays. Here, we demonstrate the effect of a crystalline LaFeO3 buffer…

The discovery that the interface between two band gap insulators LaAlO3 and SrTiO3 is highly conducting has raised an enormous interest in the field of oxide electronics. The LAlO3/SrTiO3 interface can be tuned using an electric field and…

The quasi two-dimensional electron gas (q-2DEG) at oxide interfaces provides a platform for investigating quantum phenomena in strongly correlated electronic systems. Here, we study the transport properties at the high-mobility…

Strongly Correlated Electrons · Physics 2017-06-30 K. Han , Z. Huang , S. W. Zeng , M. Yang , C. J. Li , W. X. Zhou , X. Renshaw Wang , T. Venkatesan , J. M. D. Coey , M. Goiran , W. Escoffier , Ariando

We have measured the electronic structure of the two-dimensional electron system (2DES) found at the Al/SrTiO3 (Al/STO) and LaAlO3/SrTiO3 (LAO/STO) interfaces by means of laser angle resolved photoemission spectroscopy, taking advantage of…

Oxide growth with semiconductor-like accuracy has led to atomically precise thin films and interfaces that exhibit a plethora of phases and functionalities not found in the oxide bulk material. This yielded spectacular discoveries such as…

We propose a minimal tight-binding model for the electronic interface layer of the LaAlO$_3$/SrTiO$_3$ heterostructure with oxygen vacancies. In this model, the effective carriers are subject to oxygen vacancy induced magnetic impurities.…

Strongly Correlated Electrons · Physics 2026-02-18 D. Jones , A. Weh , A. Östlin , D. Braak , T. Kopp , P. Seiler , U. Eckern , L. Chioncel

Many-body interactions in transition-metal oxides give rise to a wide range of functional properties, such as high-temperature superconductivity, colossal magnetoresistance, or multiferroicity. The seminal recent discovery of a…

We investigate the structural, electronic, transport, and thermoelectric properties of LaNiO$_3$/SrTiO$_3(001)$ superlattices containing either exclusively $n$- or $p$-type interfaces or coupled interfaces of opposite polarity by using…

Materials Science · Physics 2017-03-03 Benjamin Geisler , Ariadna Blanca-Romero , Rossitza Pentcheva

Three-dimensional Fermi surfaces at a high temperature have been clarified for a strongly correlated Ce compound, ferromagnet CeRu$_2$Ge$_2$ in the paramagnetic phase, by virtue of a soft x-ray $h\nu$-dependent (700-860 eV) ARPES. Although…

Strongly Correlated Electrons · Physics 2007-05-23 M. Yano , A. Sekiyama , H. Fujiwara , T. Saita , S. Imada , T. Muro , Y. Onuki , S. Suga

The electronic structures of the iron-based superconductors have been intensively studied by using angleresolved photoemission spectroscopy (ARPES). A considerable amount of research has been focused on the LaFeAsO family, showing the…

The interface between the polar LaAlO$_3$ and nonpolar SrTiO$_3$ layers has been shown to exhibit various electronic and magnetic phases such as two dimensional electron gas, superconductivity, magnetism and electronic phase separation.…

Strongly Correlated Electrons · Physics 2012-08-31 A. Annadi , A. Putra , Z. Q. Liu , X. Wang , K. Gopinadhan , Z. Huang , S. Dhar , T. Venkatesan , Ariando

Oxide heterointerfaces constitute a rich platform for realizing novel functionalities in condensed matter. A key aspect is the strong link between structural and electronic properties, which can be modified by interfacing materials with…

Materials Science · Physics 2021-07-09 T. C. van Thiel , J. Fowlie , C. Autieri , N. Manca , M. Šiškins , D. Afanasiev , S. Gariglio , A. D. Caviglia

This paper reviews the most recent ARPES results on the cuprate superconductors and their insulating parent and sister compounds, with the purpose of providing an updated summary of the extensive literature in this field. The low energy…

Superconductivity · Physics 2009-11-07 Andrea Damascelli , Zhi-Xun Shen , Zahid Hussain

Nowadays it has become feasible to perform angle-resolved photoemission spectroscopy (ARPES) measurements of transition-metal oxides with three-dimensional perovskite structures owing to the availability of high-quality single crystals of…

Strongly Correlated Electrons · Physics 2007-05-23 H. Wadati , T. Yoshida , A. Chikamatsu , H. Kumigashira , M. Oshima , H. Eisaki , Z. -X. Shen , T. Mizokawa , A. Fujimori