We propose a minimal tight-binding model for the electronic interface layer of the LaAlO3/SrTiO3 heterostructure with oxygen vacancies. In this model, the effective carriers are subject to oxygen vacancy induced magnetic impurities. Both the effects of random on-site potentials and Zeeman-like exchange interactions between correlated carriers and magnetic impurities are taken into account. By applying the combined coherent potential approximation (CPA) and dynamical mean-field theory (DMFT) for a ferromagnetic state, we uncover a disordered Fermi-liquid regime for the majority-spins and a low energy scale which controls the transport of the minority-spin carriers, both induced by the magnetic impurities.
@article{arxiv.2602.15774,
title = {Correlated electronic states at a ferromagnetic oxide interface},
author = {D. Jones and A. Weh and A. Östlin and D. Braak and T. Kopp and P. Seiler and U. Eckern and L. Chioncel},
journal= {arXiv preprint arXiv:2602.15774},
year = {2026}
}