Related papers: Understanding magnetic focusing in graphene $p$-$n…
We compare classical versus quantum electron transport in recently investigated magnetic focusing devices [S. Bhandari et al., Nano Lett. 16, 1690 (2016)] exposed to the perturbing potential of a scanning gate microscope (SGM). Using the…
Off-resonant charge transport through molecular junctions has been extensively studied since the advent of single-molecule electronics and it is now well understood within the framework of the non-interacting Landauer approach. Conversely,…
Position measurements at the quantum level are vital for many applications, but also challenging. Typically, methods based on optical phase shifts are used, but these methods are often weak and difficult to apply to many materials. An…
Focusing of electron waves in graphene p-n junctions is a striking manifestation of fermionic negative refraction. We analyze lensing in smooth p-n junctions and find that it differs in several interesting ways from that in the previously…
Ultra-clean graphene sheets encapsulated between hexagonal boron nitride crystals host two-dimensional electron systems in which low-temperature transport is solely limited by the sample size. We revisit the theoretical problem of carrying…
Using the recently developed time-dependent Landauer-B\"uttiker formalism and Jefimenko's retarded solutions to the Maxwell equations, we show how to compute the time-dependent electromagnetic field produced by the charge and current…
A near-field scanning optical microscope is used to locally induce photocurrent in a graphene transistor with high spatial resolution. By analyzing the spatially resolved photo-response, we find that in the n-type conduction regime a p-n-p…
The proposed semiclassical theory predicts two types of oscillations in the flow of current injected from a point source near a ballistic p-n junction in graphene in a strong magnetic field. One originates from the classical effect of…
The focusing of electric current by a single \textit{p-n} junction in graphene is predicted. We show that precise focusing can be achieved by fine-tuning the densities of carriers on the n- and p-sides of the junction to equal values,…
Ballistic transport in graphene p-n junctions in the presence of magnetic field exhibits two distinct regimes: At low fields, transport is partially suppressed by the field. When the field exceeds a certain critical value, the junction is…
We demonstrate the use of a quantum transport model to study heavily graded graphene p-n junctions in the quantum Hall regime. A combination of p-n interface roughness and delta function disorder potential allows us to compare experimental…
The effect of electronic interactions in graphene with vacancies or resonant scatterers is investigated. We apply dynamical mean-field theory in combination with quantum Monte Carlo simulations, which allow us to treat non-perturbatively…
We present a method for obtaining quantum transport properties in graphene that uniquely combines three crucial features: microscopic treatment of charge disorder, fully quantum mechanical analysis of transport, and the ability to model…
The electronic transport of graphene p-n junctions under perpendicular magnetic field is investigated in theory. Under low magnetic field, the transport is determined by the resonant tunneling of Landau levels and conductance versus…
We demonstrate ultra-sharp (${\lesssim}\,10\text{ nm}$) lateral $p\text{-}n$ junctions in graphene using electronic transport, scanning tunneling microscopy, and first principles calculations. The $p\text{-}n$ junction lies at the boundary…
We investigate the electron transport through a graphene p-n junction under a perpendicular magnetic field. By using Landauar-Buttiker formalism combining with the non-equilibrium Green function method, the conductance is studied for the…
We investigate electronic transport through a graphene $n$-$p$ junction in the quantum Hall effect regime at high perpendicular magnetic field, when the filling factors in the $n$-doped and $p$-doped regions are fixed to 2 and -2…
Accessing intrinsic properties of a graphene device can be hindered by the influence of contact electrodes. Here, we capacitively couple graphene devices to superconducting resonant circuits and observe clear changes in the resonance-…
We present a theory of quantum-coherent transport through a lateral p-n-p structure in graphene, which fully accounts for the interference of forward and backward scattering on the p-n interfaces. The backreflection amplitude changes sign…
A p-n junction, induced in graphene by gating, works to contrast the edge states of electrons and holes on each side of it. In a magnetic field those edge states carry two species of persistent current, which are intimately tied to the…