Related papers: Strain-balanced type-II superlattices for efficien…
Recently, GaAsSb/GaAsN type II short-period superlattices (SLs) have been proposed as suitable structures to be implemented in the optimal design of monolithic multi-junction solar cells. However, due to strong surface Sb segregation,…
We argue that alternating-layer structures of lattice mismatched or misaligned (twisted) atomically-thin layers should be expected to be more efficient absorbers of the broad-spectrum of solar radiation than the bulk material of each…
In this paper, the flexibility of long-wavelength Type-II InAs/GaSb superlattice (Ga-containing SL) is explored and investigated from the growth to the device performance. First, several samples with different SL period composition and…
Multijunction solar cell design is guided by both the theoretical optimal bandgap combination as well as the realistic limitations to materials with these bandgaps. For instance, triple-junction III-V multijunction solar cells commonly use…
Ternary-based InAs/InAs1-xSbx Strained-Layer Superlattice (SLS)material with type-II band alignment belongs to the 6.1 A family with reasonably small lattice mismatch with GaSb substrate for epitaxial growth. InAs/InAs1-xSbx SLS have been…
We calculate the band structure of a two-dimensional GaAs/AlGaAs superlattice and estimate the ultimate efficiency of solar cells using this type of structure for solar energy conversion. The superlattice under consideration consists of…
We present a multiscale approach for modeling an intermediate-band solar cell based on a GaAs-GaAlAs quantum dot superlattice of cubic symmetry. Our framework combines high-accuracy theoretical calculations of the superlattice band…
ScxAl1-xN is an emerging III-nitride material known for its high piezoelectric coefficient and ferroelectric properties. Integration of wide-bandgap ScxAl1-xN with GaN is particularly attractive for quantum photonic devices. Achieving low…
This work investigates midwave infrared Type-II InAs/GaSb superlattice (SL) grown by molecular beam epitaxy on GaSb substrate. In order to compensate the natural tensile strain of the InAs layers, two different shutter sequences have been…
The purpose of this work is to look for a practical structure for application of quantum dots (QD) in solar cells in order to enhance sub-band gap photon absorption. We focuse on a stack of strain-compensated GaSb/GaAs type-II QDs. We…
Recent increasing interest in strain balanced Type-II superlattices material causing close attention from industry. Tremendous investment was drawn toward establishing strain balanced superlattice (SLS) as new alternative for infrared…
We used AlGaSb/AlGaAs material system for a theoretical study of photovoltaic performance of the proposed GaAs-based solar cell in which the type-II quantum dot (QDs) absorber is spatially separated from the depletion region. Due to…
Recombination through quantum dots (QDs) is a major factor that limits efficiency of QD intermediate-band (IB) solar cells. Our proposal for a new IB solar cell based on type-II GaSb QDs located outside the depletion region of a GaAs…
Like many optoelectronics, the highest quality III-V solar cells start out as thin single-crystalline multilayers on GaAs substrates. Separating these device layers from their growth substrate enables higher performing devices and wafer…
We present a theoretical analysis of mid-infrared radiative recombination in InAs/GaSb superlattices (SLs). We employ a semi-analytical plane wave expansion method in conjunction with an 8-band $\mathbf{k} \cdot \mathbf{p}$ Hamiltonian to…
Antimonide type II superlattices is expected to overtake HgCdTe as the preferred materials for infrared detection due to their excellent photoelectric properties and flexible and adjustable band structures. Among these compounds, InAs/GaSb…
Quantum dot solar cells (QDSC) are widely acknowledged to be one of the best solar energy harvesting devices in the present world. Absorber layer is a core component of a QDSC with a strong influence on its operational efficiency. Hence, we…
We present a new double-layer design for 2D surface superlattice systems in GaAs-AlGaAs heterostructures. Unlike previous studies, our device (1) uses an in-situ gate, which allows very short period superlattice in high mobility, shallow…
Ultrathin solar cells reduce material usage and allow the use of lower-quality materials thanks to their one order of magnitude smaller thickness than their conventional counterparts. However, efficient photonic light-trapping is required…
Herein a genetic algorithm for optimising the design of layered 2D heterostructure is proposed. As a proof-of-concept it is applied to Sb$_2$Te$_3$-GeTe phase-change material superlattices, and the resulting lowest energy structure is grown…