Related papers: Type-II InAs/GaAsSb/GaAs quantum dots as artificia…
We report the fabrication and electrical characterization of depletion-mode quantum dots in a two-dimensional hole gas (2DHG) in intrinsic silicon. We use fixed charge in a SiO$_2$/Al$_2$O$_3$ dielectric stack to induce a 2DHG at the…
The interaction between spins in coupled quantum dots is revealed in distinct fine structure patterns in the measured optical spectra of InAs/GaAs double quantum dot molecules containing zero, one, or two excess holes. The fine structure is…
Quantum wells in InAs/GaSb heterostructures can be tuned to a topological regime associated with the quantum spin Hall effect, which arises due to an inverted band gap and hybridized electron and hole states. Here, we investigate…
We use magnetotunnelling spectroscopy as a non-invasive probe to produce two-dimensional spatial images of the probability density of an electron confined in a self-assembled semiconductor quantum dot. The images reveal clearly the…
Ge/Si structures with vertically stacked quantum dots are simulated to implement the basic elements of a quantum computer for operation with electron spin states. Elastic-strain fields are simulated using the conjugate gradient method and…
We study the electronic structure of a single self-assembled InAs quantum dot by probing elastic single-electron tunneling through a single pair of weakly coupled dots. In the region below pinch-off voltage, the non-linear threshold voltage…
Gate-defined quantum dots define an attractive platform for quantum computation and have been used to confine individual charges in a planar array. Here, we demonstrate control over vertical double quantum dots confined in a double quantum…
Long distance (1.4 micron) interaction of two different InAs/GaAs quantum dots in a photonic crystal microcavity is observed. Resonant optical excitation in the p-state of any of the quantum dots, results in an increase of the s-state…
We have studied the emission properties of self-organized InAs quantum dots (QDs) grown in an InGaAs quantum well by metalorganic chemical vapor deposition. Low-temperature photoluminescence spectroscopy shows emission from single QDs…
We report a single-shot-based projective readout of a semiconductor hybrid qubit formed by three electrons in a GaAs double quantum dot. Voltage-controlled adiabatic transitions between the qubit operations and readout conditions allow…
Semiconductor nanowires can be utilized to create quantum dot qubits. The formation of quantum dots is typically achieved by means of bottom gates created by a lift-off process. As an alternative, we fabricated flat buried bottom gate…
It was proposed that a dilute semimetal is unstable against the formation of an exciton insulator, however experimental confirmations have remained elusive. We investigate the origin of bulk energy gap in inverted InAs/GaSb quantum wells…
We report the observation of Kondo physics in a spin- 3/2 hole quantum dot. The dot is formed close to pinch-off in a hole quantum wire defined in an undoped AlGaAs/GaAs heterostructure. We clearly observe two distinctive hallmarks of…
The electronic structure of strain-engineered single InGaAs/GaAs quantum dots emitting in the telecommunication O band is probed experimentally by photoluminescence excitation spectroscopy. Observed resonances can be attributed to p-shell…
Cluster states, a special type of highly entangled states, are a universal resource for measurement-based quantum computation. Here, we propose an efficient one-step generation scheme for cluster states in semiconductor quantum dot…
This work presents an analysis of the electronic and optical properties of InAs/GaAs columnar quantum dots (QDs) by performing multi-million-atom tight-binding simulations. The plots of the polarisation-dependent ground state optical…
We present a theoretical analysis of the electronic properties of type-II GaAs$_{1-x}$Sb$_{x}$/GaAs quantum rings (QRs), from the perspective of applications in intermediate band solar cells (IBSCs). We outline the analytical solution of…
Trapping electrons in quantum dots and controlling their collective quantum states is crucial for converting semiconductor structures into bits of quantum information processing. Here, we study single- and two-particle states in quantum…
Self-assembled optically active quantum dot molecules (QDMs) allow the creation of protected qubits via singlet-triplet spin states. The qubit energy splitting of these states is defined by the tunnel coupling strength and is, therefore,…
Doping a self-assembled InGaAs/GaAs quantum dot (QD) with a single Mn atom, a magnetic acceptor impurity, provides a quantum system with discrete energy levels and original spin-dependent optical selection rules, which thus has large…